MT16VDDF12864HG-26A Micron, MT16VDDF12864HG-26A Datasheet - Page 25

• Manufacturer Part Number: MT16VDDF12864HG-26A
• Description: DRAM_Module, high-speed CMOS, dynamic random-access, 512MB and 1GB memory modules organized in a x64 configuration
• Manufacturer: Micron

Table 19: Serial Presence-Detect EEPROM DC Operating Conditions
All voltages referenced to V
Table 20: Serial Presence-Detect EEPROM AC Operating Conditions
All voltages referenced to V
NOTE:
1. The SPD EEPROM WRITE cycle time (
09005aef80a646bc
DDF16C64_128x64HG_A.fm - Rev. A 3/03 EN
PARAMETER/CONDITION
SUPPLY VOLTAGE
INPUT HIGH VOLTAGE: Logic 1; All inputs
INPUT LOW VOLTAGE: Logic 0; All inputs
OUTPUT LOW VOLTAGE: I
INPUT LEAKAGE CURRENT: V
OUTPUT LEAKAGE CURRENT: V
STANDBY CURRENT: SCL = SDA = V
POWER SUPPLY CURRENT: SCL clock frequency = 100 KHz
PARAMETER/CONDITION
SCL LOW to SDA data-out valid
Time the bus must be free before a new transition can start
Data-out hold time
SDA and SCL fall time
Data-in hold time
Start condition hold time
Clock HIGH period
Noise suppression time constant at SCL, SDA inputs
Clock LOW period
SDA and SCL rise time
SCL clock frequency
Data-in setup time
Start condition setup time
Stop condition setup time
WRITE cycle time
the EEPROM internal erase/program cycle. During the WRITE cycle, the EEPROM bus interface circuit is disabled, SDA
remains HIGH due to pull-up resistor, and the EEPROM does not respond to its slave address.
OUT
SS
SS
IN
; V
; V
= 3mA
= GND to V
OUT
DDSPD
DDSPD
DD
= GND to V
- 0.3V; All other inputs = V
= +2.3V to +3.6V
= +2.3V to +3.6V
t
WRC) is the time from a valid stop condition of a write sequence to the end of
DD
DD
25
DD
or V
Micron Technology, Inc., reserves the right to change products or specifications without notice.
SS
SYMBOL
t
t
t
t
t
HD:DAT
HD:STA
SU:DAT
SU:STA
SU:STO
t
t
t
t
HIGH
LOW
t
WRC
t
t
BUF
SCL
AA
DH
t
t
t
SYMBOL
F
R
I
V
DDSPD
V
V
V
I
I
I
I
LO
SB
CC
OL
LI
IH
IL
200-PIN DDR SODIMM
MIN
V
300
250
0.3
4.7
4.7
4.7
4.7
0
4
4
512MB, 1GB (x64)
DD
MIN
2.3
-1
–
–
–
–
–
´ 0.7
MAX
300
100
100
3.5
10
1
V
V
DD
DD
MAX
UNITS
3.6
0.4
10
10
30
2
KHz
+ 0.5
´ 0.3
ms
µs
µs
ns
ns
µs
µs
µs
ns
µs
µs
ns
µs
µs
©2003, Micron Technology Inc.
ADVANCE
NOTES
UNITS
mA
µA
µA
µA
1
V
V
V
V