MT16VDDF12864HG-26A Micron, MT16VDDF12864HG-26A Datasheet - Page 18

no-image

MT16VDDF12864HG-26A

Manufacturer Part Number
MT16VDDF12864HG-26A
Description
DRAM_Module, high-speed CMOS, dynamic random-access, 512MB and 1GB memory modules organized in a x64 configuration
Manufacturer
Micron
Datasheet
Table 16: DDR SDRAM Component Electrical Characteristics and Recommended AC
Notes: 1–5, 12–15, 29, 40; notes appear on pages 19–22; 0°C £ T
09005aef80a646bc
DDF16C64_128x64HG_A.fm - Rev. A 3/03 EN
AC CHARACTERISTICS
PARAMETER
DQS read postamble
ACTIVE bank a to ACTIVE bank b command
DQS write preamble
DQS write preamble setup time
DQS write postamble
Write recovery time
Internal WRITE to READ command delay
Data valid output window
REFRESH to REFRESH command interval
Average periodic refresh interval
Terminating voltage delay to V
Exit SELF REFRESH to non-READ command
Exit SELF REFRESH to READ command
Operating Conditions (-26A, -265, -202) (Continued)
DD
SYMBOL MIN
t
t
WPRES
t
t
t
t
t
WPRE
t
WPST
t
t
t
XSNR
XSRD
RPST
t
REFC
WTR
RRD
REFI
VTD
NA
WR
18
0.25
200
t
0.4
0.4
15
15
75
QH -
A
0
1
0
£ +70°C; V
-26A
t
DQSQ
MAX
70.3
0.6
0.6
7.8
Micron Technology, Inc., reserves the right to change products or specifications without notice.
DD
MIN
0.25
200
t
0.4
0.4
15
15
75
QH -
= V
0
1
0
-265
DD
t
200-PIN DDR SODIMM
DQSQ
Q = +2.5V ±0.2V
MAX MIN MAX
70.3
0.6
0.6
7.8
512MB, 1GB (x64)
0.25
t
200
0.4
0.4
15
15
QH -
80
0
1
0
-202
t
DQSQ
70.3
0.6
0.6
7.8
UNITS NOTES
©2003, Micron Technology Inc.
t
t
t
t
t
ns
ns
ns
ns
µs
µs
ns
ns
CK
CK
CK
CK
CK
ADVANCE
18, 19
17
22
21
21

Related parts for MT16VDDF12864HG-26A