s29ns01gs Meet Spansion Inc., s29ns01gs Datasheet - Page 31

• Manufacturer Part Number: s29ns01gs
• Description: S29ns01gs 1024 Megabit 128 Megabyte 16-bit Data Width, Burst Access, Simultaneous Read/write, 1.8 Volt-only Flash Memory In 65 Nm Mirrorbit Technology
• Manufacturer: Meet Spansion Inc.

7.8
April 20, 2009 S29NS-S_00_02
7.8.1
Program/Erase Operations
Program Methods
To initiate any program and/or erase operation, as with writing any command sequence, the system must
drive AVD# and CE# to V
CE# to V
Addresses are latched on the rising edge of AVD# during asynchronous writes. Data is latched on the rising
edge of WE# during asynchronous writes.
Note the following:
There are two methods of programming that may be used, Page or Bit-Field. The Page method programs an
entire 512 Byte group with any bit pattern but is limited to programming that page once before an erase is
required. The Bit-Field method uses a specific format for the data in a page that limits the available space in
the page to 256 Bytes but allows for the same page to be programmed multiple times to enable incremental
programming of bits in the page. Each method affects the entire page it is used on. Each page may be
programmed by either method such that pages programmed by the different methods may be mixed within
any sector. Any memory sector can have a combination of any number of dedicated page-program, bit-field
program or blank pages.
See
A 0 cannot be programmed back to a 1. A succeeding read shows that the data is still 0. Only erase
operations can convert a 0 to a 1.
The duration of program and erase operations is shown in
Performance on page
Program and erase operations may be suspended. An erase operation may be suspended to allow either
programming or reading of another sector (but not in the erase sector) in any bank. No other erase
operation can be started during an erase suspend. A program operation may be suspended to allow
reading of another location in any bank. Bits being programmed by the suspended program operation will
be undefined during the suspend, all other locations are readable. No other program or erase operation
may be started during a suspended program operation - program or erase commands will be ignored
during a suspended program operation. After an intervening program operation or read access is complete
the suspended erase or program operation may be resumed. Program and Erase operations may be
interrupted as often as necessary but in order for a program or erase operation to progress to completion
there must be some periods of time between resume and the next suspend commands greater than or
equal to t
When the Embedded Program algorithm is complete, the device returns to the calling routine (Erase
Suspend, SSR Lock, Secure Silicon Region, or Idle State).
The system can determine the status of the program operation by reading the Status Register. Refer to
Status Register on page 25
Any commands written to the device during the Embedded Program Algorithm are ignored except the
Program Suspend, and Status Read command. Any commands written to the device during the Embedded
Erase Algorithm are ignored except Erase Suspend and Status Read command.
A hardware reset immediately terminates any in progress program/erase operation, thus the terminated
operation should be reinitiated once the device has returned to the idle state, to ensure data integrity.
Figure 7.2
IL
new data
, and OE# to V
old data
results
PRS
D a t a
for the memory array partition under Bit-Field and Page programming methods.
or t
ERS
0011
0101
0001
S h e e t
in
66.
S29NS-S MirrorBit
IH
IL
Section 10.7.5, Erase and Programming Performance on page
, and OE# to V
when writing commands or data.
for information on these status bits.
( P r e l i m i n a r y )
IH
®
Eclipse
when providing an address to the device, and drive WE# and
™
Flash Family
Section 10.7.5, Erase and Programming
66.
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