s29ns01gs Meet Spansion Inc., s29ns01gs Datasheet - Page 70

• Manufacturer Part Number: s29ns01gs
• Description: S29ns01gs 1024 Megabit 128 Megabyte 16-bit Data Width, Burst Access, Simultaneous Read/write, 1.8 Volt-only Flash Memory In 65 Nm Mirrorbit Technology
• Manufacturer: Meet Spansion Inc.

70
Word Offset
Word Offset
(SA) + 1Ch
(SA) + 1Dh
(SA) + 1Bh
(SA) + 1Eh
(SA) + 1Fh
(SA) + 20h
(SA) + 21h
(SA) + 22h
(SA) + 23h
(SA) + 24h
(SA) + 25h
(SA) + 26h
(SA) + 2Ch
(SA) + 2Dh
(SA) + 27h
(SA) + 28h
(SA) + 29h
(SA) + 2Ah
(SA) + 2Bh
(SA) + 2Eh
(SA) + 2Fh
(SA) + 30h
Address
Address
Byte Offset
(SA) + 042h
(SA) + 046h
(SA) + 3Ch
(SA) +048h
(SA) + 4Ch
(SA) + 36h
(SA) + 38h
(SA) + 3Ah
(SA) + 3Eh
(SA) + 40h
(SA) + 44h
(SA) + 4Ah
Byte Address
Address
(SA) + 4Eh
(SA) + 5Ah
(SA) + 5Ch
(SA) + 5Eh
(SA) + 50h
(SA) + 52h
(SA) + 54h
(SA) + 56h
(SA) + 58h
(SA) + 60h
Table 11.5 Device Geometry Definition (16 Bank Uniform Sectors)
S29NS-S MirrorBit
Table 11.4 System Interface String - 16 bank
D a t a
0017h
0019h
0085h
0095h
0005h
0008h
0008h
0010h
0002h
0002h
0001h
0001h
Data
1G
0001Bh
0001h
0000h
0009h
0000h
0001h
00FFh
0003h
0000h
0002h
Data
01G
S h e e t
®
Eclipse
V
D7–D4: volt, D3–D0: 100 millivolt
V
D7–D4: volt, D3–D0: 100 millivolt
V
D7–D4: volt, D3–D0: 100 millivolt
V
D7–D4: volt, D3–D0: 100 millivolt
Typical timeout per single byte/word write 2
Typical timeout for Min. size buffer write 2
512-byte program)
Typical timeout per individual block erase 2
Typical timeout for full chip erase 2
(< 32K, 64K, 128K ms)
Max. timeout for byte/word write 2
Max. timeout for buffer write 2
write or <976 µs worst case)
Max. timeout per individual block erase 2
Max. timeout for full chip erase 2
CC
CC
PP
PP
Min. voltage (00h = no V
Max. voltage (00h = no V
Min. (write/erase)
Max. (write/erase)
™
Device Size = 2
Flash Device Interface description (refer to CFI publication 100)
01h = x16-only interface
Max. number of bytes in multi-byte write = 2
(00h = not supported)
Number of Erase Block Regions within device
Erase Block Region 1 Information
(refer to the JEDEC JEP137b or CFI publication 100)
Number of blocks in region minus 1, two bytes, little endian.
Size of blocks in 256 byte units, two bytes, little endian
Flash Family
( P r e l i m i n a r y )
N
byte
PP
PP
N
times typical (3x to 4x of 512 byte typical buffer
pin present)
N
pin present)
N
Description
times typical (2x or < 512K ms)
N
times typical (00h = not supported) (<124 µs)
ms (00h = not supported)
Description
N
N
µs (00h = not supported) (<256 µs per
times typical (2x or <360 ms)
N
N
S29NS-S_00_02 April 20, 2009
ms (<256 ms)
µs (00h = not supported) (<32µs)
N