s908qc16vdse Freescale Semiconductor, Inc, s908qc16vdse Datasheet - Page 255
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s908qc16vdse
Manufacturer Part Number
s908qc16vdse
Description
M68hc08 Microcontrollers
Manufacturer
Freescale Semiconductor, Inc
Datasheet
1.S908QC16VDSE.pdf
(274 pages)
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19.17 Memory Characteristics
Freescale Semiconductor
RAM data retention voltage
FLASH program bus clock frequency
FLASH PGM/ERASE supply voltage (V
FLASH read bus clock frequency
FLASH page erase time
FLASH mass erase time
FLASH PGM/ERASE to HVEN setup time
FLASH high-voltage hold time
FLASH high-voltage hold time (mass erase)
FLASH program hold time
FLASH program time
FLASH return to read time
FLASH cumulative program HV period
FLASH endurance
FLASH data retention time
1. Typical values are for reference only and are not tested in production.
2. Values are based on characterization results, not tested in production.
3. f
4. t
5. t
6. Typical endurance was evaluated for this product family. For additional information on how Freescale defines Typical
7. Typical data retention values are based on intrinsic capability of the technology measured at high temperature and de-rated
HVEN to 0.
t
Endurance, please refer to Engineering Bulletin EB619.
to 25 C using the Arrhenius equation. For additional information on how Freescale definesTypical Data Retention, please
refer to Engineering Bulletin EB618.
RCV
Read
HV
HV
is defined as the cumulative high voltage programming time to the same row before next erase.
must satisfy this condition: t
is defined as the time it needs before the FLASH can be read after turning off the high voltage charge pump, by clearing
is defined as the frequency range for which the FLASH memory can be read.
(6)
MC68HC908QC16 • MC68HC908QC8 • MC68HC908QC4 Data Sheet, Rev. 4
Characteristic
(7)
(2)
NVS
+ t
DD
NVH
)
+ t
PGS
+ (t
PROG
x 32) ≤ t
V
PGM/ERASE
Symbol
f
t
HV
t
Read
t
MErase
V
t
t
RCV
t
PROG
t
t
t
Erase
NVHL
HV
NVH
PGS
NVS
RDR
—
—
—
maximum.
(5)
(4)
(3)
10 k
Min
100
1.3
2.7
3.6
10
30
15
—
1
0
4
5
5
1
Typ
100 k
100
—
—
—
—
—
—
—
—
—
—
—
—
4
Memory Characteristics
(1)
Max
8 M
5.5
5.5
40
—
—
—
—
—
—
—
—
—
—
4
Cycles
Years
MHz
Unit
ms
ms
ms
Hz
µs
µs
µs
µs
µs
µs
V
V
255
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