s908az32ag2cfue Freescale Semiconductor, Inc, s908az32ag2cfue Datasheet - Page 44

• Manufacturer Part Number: s908az32ag2cfue
• Description: M68hc08 Microcontrollers 8-bit Microcontroller
• Manufacturer: Freescale Semiconductor, Inc

Flash Memory
4.3 FLASH Control and Block Protect Registers
The FLASH array has two registers that control its operation, the FLASH Control Register (FLCR) and the
FLASH Block Protect Register (FLBPR).
4.3.1 FLASH Control Register
The FLASH Control Register (FLCR) controls FLASH program and erase operations.
HVEN — High-Voltage Enable Bit
MASS — Mass Erase Control Bit
ERASE — Erase Control Bit
PGM — Program Control Bit
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This read/write bit enables the charge pump to drive high voltages for program and erase operations
in the array. HVEN can only be set if either PGM = 1 or ERASE = 1 and the proper sequence for
program or erase is followed.
Setting this read/write bit configures the FLASH array for mass or page erase operation.
This read/write bit configures the memory for erase operation. ERASE is interlocked with the PGM bit
such that both bits cannot be set at the same time.
This read/write bit configures the memory for program operation. PGM is interlocked with the ERASE
bit such that both bits cannot be equal to 1 or set to 1 at the same time.
1 = High voltage enabled to array and charge pump on
0 = High voltage disabled to array and charge pump off
1 = Mass erase operation selected
0 = Page erase operation selected
1 = Erase operation selected
0 = Erase operation unselected
1 = Program operation selected
0 = Program operation unselected
Address:
Reset:
Read:
Write:
$FF88
Bit 7
0
0
Figure 4-1. FLASH Control Register (FLCR)
= Unimplemented
6
0
0
MC68HC908AZ32A Data Sheet, Rev. 2
5
0
0
4
0
0
HVEN
3
0
MASS
2
0
ERASE
1
0
Freescale Semiconductor
PGM
Bit 0
0