mt46v128m4bn Micron Semiconductor Products, mt46v128m4bn Datasheet - Page 41

• Manufacturer Part Number: mt46v128m4bn
• Description: 512mb X4, X8, X16 Ddr Sdram
• Manufacturer: Micron Semiconductor Products

ACTIVE (ACT)
Figure 17:
READ
PDF: 09005aef80a1d9d4/Source: 09005aef82a95a3a
DDR_x4x8x16_Core2.fm - 512Mb DDR: Rev. L; Core DDR Rev. A 4/07 EN
Activating a Specific Row in a Specific Bank
The ACTIVE command is used to open (or activate) a row in a particular bank for a
subsequent access, like a read or a write, as shown in Figure 17. The value on the BA0,
BA1 inputs selects the bank, and the address provided on inputs A0–An selects the row.
The READ command is used to initiate a burst read access to an active row, as shown in
Figure 18 on page 42. The value on the BA0, BA1 inputs selects the bank, and the address
provided on inputs A0–Ai (where Ai is the most significant column address bit for a given
density and configuration, see Table 2 on page 2) selects the starting column location.
BA0, BA1
ADDRESS
RAS#
CAS#
WE#
CK#
CKE
CS#
CK
HIGH
DON’T CARE
Bank
Row
41
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512Mb: x4, x8, x16 DDR SDRAM
©2000 Micron Technology, Inc. All rights reserved.
Commands