mt46v128m4bn Micron Semiconductor Products, mt46v128m4bn Datasheet - Page 75

• Manufacturer Part Number: mt46v128m4bn
• Description: 512mb X4, X8, X16 Ddr Sdram
• Manufacturer: Micron Semiconductor Products

Figure 48:
PDF: 09005aef80a1d9d4/Source: 09005aef82a95a3a
DDR_x4x8x16_Core2.fm - 512Mb DDR: Rev. L; Core DDR Rev. A 4/07 EN
COMMAND
ADDRESS
BA0, BA1
DQ 5
DQS
CK#
CKE
A10
DM
CK
t
t
Bank WRITE – Without Auto Precharge
IS
IS
NOP 1
T0
t
t
IH
IH
Notes:
t
t
Bank x
IS
IS
Row
Row
ACT
1. NOP commands are shown for ease of illustration; other commands may be valid at these
2. BL = 4.
3. Disable auto precharge.
4. “Don’t Care” if A10 is HIGH at T8.
5. DI b = data-in from column b; subsequent elements are provided in the programmed order.
6. See Figure 50 on page 77 for detailed DQ timing.
T1
t
t
IH
IH
times.
t
CK
t
t
RCD
RAS
NOP 1
T2
t
CH
t
CL
WRITE 2
t
Bank x
Col n
IS
3
T3
t
t
DQSS (NOM)
IH
t
WPRES
75
t DS
t
WPRE
NOP 1
T4
DI
b
t DH
Micron Technology, Inc., reserves the right to change products or specifications without notice.
T4n
t
DQSL
NOP 1
T5
512Mb: x4, x8, x16 DDR SDRAM
t
DQSH
T5n
t
WPST
DON’T CARE
NOP 1
T6
©2000 Micron Technology, Inc. All rights reserved.
t
NOP 1
WR
T7
TRANSITIONING DATA
Operations
ALL BANKS
ONE BANK
Bank x 4
T8
PRE
t
RP