mt46v128m4bn Micron Semiconductor Products, mt46v128m4bn Datasheet - Page 56
mt46v128m4bn
Manufacturer Part Number
mt46v128m4bn
Description
512mb X4, X8, X16 Ddr Sdram
Manufacturer
Micron Semiconductor Products
Datasheet
1.MT46V128M4BN.pdf
(83 pages)
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Figure 29:
PDF: 09005aef80a1d9d4/Source: 09005aef82a95a3a
DDR_x4x8x16_Core2.fm - 512Mb DDR: Rev. L; Core DDR Rev. A 4/07 EN
COMMAND
COMMAND
COMMAND
Nonconsecutive READ Bursts
ADDRESS
ADDRESS
ADDRESS
DQS
DQS
DQS
Notes:
CK#
CK#
CK#
DQ
DQ
DQ
CK
CK
CK
1. DO n (or b) = data-out from column n (or column b).
2. BL = 4 or BL = 8 (if BL = 4, the bursts are concatenated; if BL = 8, the second burst interrupts
3. Three subsequent elements of data-out appear in the programmed order following DO n.
4. Three (or seven) subsequent elements of data-out appear in the programmed order follow-
5. Shown with nominal
Bank,
Bank,
Bank,
Col n
Col n
Col n
READ
READ
READ
T0
T0
T0
the first).
ing DO b.
CL = 2
NOP
NOP
NOP
T1
T1
T1
CL = 2.5
CL = 3
t
AC,
t
DQSCK, and
NOP
NOP
NOP
T2
T2
T2
56
DO
n
T2n
T2n
DO
Micron Technology, Inc., reserves the right to change products or specifications without notice.
n
t
DQSQ.
Bank,
Col b
Bank,
Bank,
Col b
Col b
READ
READ
READ
T3
T3
T3
DO
n
512Mb: x4, x8, x16 DDR SDRAM
T3n
T3n
T3n
DON’T CARE
T4
T4
T4
NOP
NOP
NOP
T4n
©2000 Micron Technology, Inc. All rights reserved.
TRANSITIONING DATA
T5
T5
T5
NOP
NOP
NOP
DO
b
Operations
T5n
T5n
DO
b
T6
T6
T6
NOP
NOP
NOP
DO
b