at90pwm81-16se ATMEL Corporation, at90pwm81-16se Datasheet - Page 263

• Manufacturer Part Number: at90pwm81-16se
• Description: 8-bit Avr Microcontroller With 8k Bytes In- System Programmable Flash
• Manufacturer: ATMEL Corporation

Table 22-15.
7734M–AVR–03/10
Instruction
Programming Enable
Chip Erase
Read Program Memory
Load Program Memory Page
Write Program Memory Page
Read EEPROM Memory
Write EEPROM Memory
Load EEPROM Memory Page
(page access)
Serial Programming Instruction Set
grammed value will read correctly. This is used to determine when the next byte can be written. This will
not work for the value 0xFF, but the user should have the following in mind: As a chip-erased device con-
tains 0xFF in all locations, programming of addresses that are meant to contain 0xFF, can be skipped. This
does not apply if the EEPROM is re-programmed without chip erasing the device. In this case, data poll-
ing cannot be used for the value 0xFF, and the user will have to wait at least t
programming the next byte. See
Table 22-14.
Figure 22-8.
Symbol
t
t
t
WD_FLASH
WD_EEPROM
WD_ERASE
1100 0001
0010 H000
0100 H000
1010 0000
1010 1100
1010 1100
0100 1100
1100 0000
SERIAL DATA OUTPUT
SERIAL CLOCK INPUT
Byte 1
SERIAL DATA INPUT
Minimum Wait Delay Before Writing the Next Flash or EEPROM Location
Serial Programming Waveforms
SAMPLE
(MOSI)
(MISO)
0000 0000
000a aaaa
000a aaaa
(SCK)
0101 0011
000x xxaa
000x xxaa
100x xxxx
000x xxxx
Byte 2
Instruction Format
Table 22-14
MSB
MSB
0000 00bb
bbbb bbbb
bbbb bbbb
bbbb bbbb
xxbb bbbb
bbxx xxxx
xxxx xxxx
xxxx xxxx
Byte 3
for t
WD_EEPROM
iiii iiii
oooo oooo
oooo oooo
xxxx xxxx
xxxx xxxx
xxxx xxxx
iiii iiii
iiii iiii
Byte4
value.
Minimum Wait Delay
Operation
Enable Serial Programming after RESET
goes low.
Chip Erase EEPROM and Flash.
Read H (high or low) data o from Program
memory at word address a:b.
Write H (high or low) data i to Program
Memory page at word address b. Data low
byte must be loaded before Data high byte
is applied within the same address.
Write Program Memory Page at address
a:b.
Read data o from EEPROM memory at
address a:b.
Write data i to EEPROM memory at
address a:b.
Load data i to EEPROM memory page
buffer. After data is loaded, program
EEPROM page.
4.5 ms
3.6 ms
9.0 ms
AT90PWM81
WD_EEPROM
LSB
LSB
before
263