c8051t617 Silicon Laboratories, c8051t617 Datasheet - Page 106

• Manufacturer Part Number: c8051t617
• Description: Mixed Signal Byte-programmable Eprom Mcu
• Manufacturer: Silicon Laboratories

C8051T610/1/2/3/4/5/6/7
11. EPROM Program Memory
C8051T610/1/2/3/4/5/6/7 devices include 16 kB (C8051T610/1/6/7) or 8 kB (C8051T612/3/4/5) of on-chip
byte-programmable EPROM for program code storage. The EPROM memory can be programmed via the
C2 debug and programming interface when a special programming voltage is applied to the V
location in EPROM memory is programmable only once (i.e. non-erasable). Table 11.1 shows the EPROM
specifications.
Table 11.1. EPROM Electrical Characteristics
11.1. Programming the EPROM Memory
Programming of the EPROM memory is accomplished through the C2 programming and debug interface.
When creating hardware to program the EPROM, it is necessary to follow the programming steps listed
below. Please refer to the “C2 Interface Specification” available at http://www.silabs.com for details on
communicating via the C2 interface. Section “20. C2 Interface” on page 204 has information about C2 reg-
ister addresses for the C8051T610/1/2/3/4/5/6/7.
Important Note: There is a finite amount of time which V
device, which is cumulative over the life of the device. Refer to Table 2.1 on page 28 for the V
ing specification.
106
EPROM Size
EPROM Size
Write Cycle Time (per Byte)
Programming Voltage (V
*Note: 512 bytes at location 0x3E00 to 0x3FFF are not available for program storage
1. Reset the device using the /RST pin.
2. Wait at least 20 μs before sending the first C2 command.
3. Place the device in core reset: Write 0x04 to the DEVCTL register.
4. Set the device to program mode (1st step): Write 0x40 to the EPCTL register.
5. Set the device to program mode (2nd step): Write 0x58 to the EPCTL register.
6. Apply the V
7. Write the first EPROM address for programming to EPADDRH and EPADDRL.
8. Write a data byte to EPDAT. EPADDRH:L will increment by 1 after this write.
9. Poll the EPBusy bit using a C2 Address Read command. Note: If EPError is set at this time,
10. If programming is not finished, return to Step 8 to write the next address in sequence, or return
11. Remove program mode (1st step): Write 0x40 to the EPCTL register.
12. Remove the V
13. Remove program mode (2nd step): Write 0x00 to the EPCTL register.
14. Reset the device: Write 0x02 and then 0x00 to the DEVCTL register.
Parameter
the write operation failed.
to Step 7 to program a new address.
PP
PP
PP
)
programming Voltage.
programming Voltage.
C8051T610/1/6/7
C8051T612/3/4/5
Conditions
Rev. 0.3
PP
16384*
can be applied without damaging the
8192
6.25
Min
—
Typ
105
6.5
—
—
Max
6.75
—
—
—
PP
pin. Each
Units
Bytes
Bytes
µs
PP
V
tim-