c8051t617 Silicon Laboratories, c8051t617 Datasheet - Page 58

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c8051t617

Manufacturer Part Number
c8051t617
Description
Mixed Signal Byte-programmable Eprom Mcu
Manufacturer
Silicon Laboratories
Datasheet
C8051T610/1/2/3/4/5/6/7
Table 5.1. ADC0 Electrical Characteristics
V
58
DC Accuracy
Resolution
Integral Nonlinearity
Differential Nonlinearity
Offset Error
Full Scale Error
Dynamic Performance (10 kHz sine-wave input, 1 dB below Full Scale, 500 ksps)
Signal-to-Noise Plus Distortion
Total Harmonic Distortion
Spurious-Free Dynamic Range
Conversion Rate
SAR Conversion Clock
Conversion Time in SAR Clocks
Track/Hold Acquisition Time
Throughput Rate
Analog Inputs
Absolute Voltage on External
ADC Input
Input Voltage Range (Gain = 1x)
Sampling Capacitance
Temperature Sensor
Linearity
Slope
Slope Error
Offset
Offset Error
Power Specifications
Power Supply Current
(V
DD
DD
= 3.0 V, V
supplied to ADC0)
1,3
1,3
1,3
Parameter
1,3
1
1,3
REF
1
= 2.40 V (REFSL = 0), PGA Gain = 1, –40 to +85 °C unless otherwise specified.
2
Operating Mode, 500 ksps
Guaranteed Monotonic
Up to the 5
Differential mode
(Temp = 0 °C)
(Temp = 0 °C)
10-bit Mode
V
V
Conditions
AIN – GND
8-bit Mode
0.5x Gain
DD
DD
1x Gain
> 2.0 V
< 2.0 V
th
Rev. 0.3
harmonic
GND – 0.3
TBD
Min
300
2.0
–2
–2
13
11
0
±0.5
±0.5
TBD
TBD
TBD
TBD
TBD
Typ
–75
400
10
60
72
0
0
5
3
V
DD
V
Max
8.33
500
900
±1
±1
REF
2
2
+ 0.3
µV / °C
µV / °C
clocks
clocks
Units
MHz
ksps
LSB
LSB
LSB
LSB
bits
mV
mV
dB
dB
dB
µA
µs
pF
pF
°C
ns
V
V

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