CY7C1355C-100AC CYPRESS [Cypress Semiconductor], CY7C1355C-100AC Datasheet - Page 23

• Manufacturer Part Number: CY7C1355C-100AC
• Description: 9-Mbit (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture
• Manufacturer: CYPRESS [Cypress Semiconductor]

Document #: 38-05539 Rev. **
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature ................................. –65°C to +150°C
Ambient Temperature with
Power Applied............................................. –55°C to +125°C
Supply Voltage on V
DC Voltage Applied to Outputs
in Three-State ..................................... –0.5V to V
DC Input Voltage....................................–0.5V to V
Electrical Characteristics
V
V
V
V
V
V
I
I
I
I
I
I
I
Notes:
17. Overshoot: V
18. T
Parameter
X
OZ
DD
SB1
SB2
SB3
SB4
DD
DDQ
OH
OL
IH
IL
Power-up
: Assumes a linear ramp from 0V to V
Power Supply Voltage
I/O Supply Voltage
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Load
Input Current of MODE Input = V
Input Current of ZZ
Output Leakage Current GND ≤ V
V
Current
Automatic CE
Power-down
Current—TTL Inputs
Automatic CE
Power-down
Current—CMOS Inputs
Automatic CE
Power-down
Current—CMOS Inputs
Automatic CE
Power-down
Current—TTL Inputs
IH
DD
(AC) < V
Operating Supply
Description
DD
DD
Relative to GND........ –0.5V to +4.6V
+1.5V (Pulse width less than t
[17]
[17]
Over the Operating Range
V
V
V
V
V
V
V
V
V
V
GND ≤ V
Input = V
Input = V
Input = V
V
f = f
V
V
f = f
V
V
f = 0, inputs static
V
V
f = f
V
V
0, inputs static
DD
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
DD
DD
IN
DD
IN
DD
IN
DD
IN
(min.) within 200 ms. During this time V
MAX
MAX
MAX
≥ V
≤ 0.3V or V
≤ 0.3V or V
≥ V
= Max, Device Deselected, or
= Max., I
= Max, Device Deselected,
= Max, Device Deselected,
= Max, Device Deselected,
= 3.3V
= 2.5V
= 3.3V, V
= 2.5V, V
= 3.3V, V
= 2.5V, V
= 3.3V
= 2.5V
= 3.3V
= 2.5V
IH
DD
, inputs switching
, inputs switching
= 1/t
CYC
I
I
SS
DD
SS
DD
or V
≤ V
≤ V
DDQ
- 0.3V or V
DD
PRELIMINARY
/2), undershoot: V
CYC
OUT
DDQ
DD,
IN
+ 0.5V
+ 0.5V
DD
DD
DD
DD
IN
IN
≤ V
Output Disabled
= 0 mA,
> V
> V
= Min., I
= Min., I
= Min., I
= Min., I
IL
Test Conditions
DD
DDQ
IN
[17, 18]
≤
– 0.3V,
0.3V
– 0.3V
IL
OH
OH
OL
OL
Current into Outputs (LOW)......................................... 20 mA
Static Discharge Voltage........................................... >2001V
(per MIL-STD-883, Method 3015)
Latch-up Current..................................................... >200 mA
Operating Range
(AC) > –2V (Pulse width less than t
Commercial
Industrial
, f =
= 8.0 mA
= 1.0 mA
= –4.0 mA
= –1.0 mA
Range
IH
All speeds
All speeds
All speeds
All Speeds
7.5-ns cycle, 133 MHz
8.5-ns cycle, 117 MHz
10-ns cycle, 100 MHz
< V
DD
and V
-40°C to +85°C
Temperature
0°C to +70°C 3.3V – 5%/+10% 2.5V – 5%
Ambient
DDQ
< V
DD
.
CYC
/2).
3.135
3.135
2.375
Min.
–0.3
–0.3
–30
2.4
2.0
2.0
1.7
–5
–5
–5
V
DD
CY7C1355C
CY7C1357C
V
V
DD
DD
2.625
Max.
V
250
220
180
3.6
0.4
0.4
0.8
0.7
30
40
30
40
40
+ 0.3V
+ 0.3V
Page 23 of 33
DD
5
5
5
to V
V
DDQ
DD
Unit
mA
mA
mA
mA
mA
mA
µA
µA
µA
µA
µA
µA
V
V
V
V
V
V
V
V
V
V