HD64F3670 RENESAS [Renesas Technology Corp], HD64F3670 Datasheet - Page 99

• Manufacturer Part Number: HD64F3670
• Description: Hitachi Single-Chip Microcomputer
• Manufacturer: RENESAS [Renesas Technology Corp]

ROM3160A_000020020300
The features of the 20-kbyte (4 kbytes of them are the E10T control program area) flash memory
built into HD64F3672 are summarized below.
7.1
Figure 7.1 shows the block configuration of 20-kbyte flash memory. The thick lines indicate
erasing units, the narrow lines indicate programming units, and the values are addresses. The
flash memory is divided into 1 kbyte 4 blocks and 16 kbytes 1 block. Erasing is performed in
these units. Programming is performed in 128-byte units starting from an address with lower eight
bits H'00 or H'80.
Programming/erase methods
Reprogramming capability
On-board programming
Automatic bit rate adjustment
Programming/erasing protection
The flash memory is programmed 128 bytes at a time. Erase is performed in single-block
units. The flash memory is configured as follows: 1 kbyte
To erase the entire flash memory, each block must be erased in turn.
The flash memory can be reprogrammed up to 1,000 times.
On-board programming/erasing can be done in boot mode, in which the boot program built
into the chip is started to erase or program of the entire flash memory. In normal user
program mode, individual blocks can be erased or programmed.
For data transfer in boot mode, this LSI's bit rate can be automatically adjusted to match
the transfer bit rate of the host.
Sets software protection against flash memory programming/erasing.
Block Configuration
Section 7 ROM
Rev. 2.0, 03/02, page 75 of 298
4 blocks, 16 kbytes 1 block.