NAND04G-B2D NUMONYX [Numonyx B.V], NAND04G-B2D Datasheet - Page 37

• Manufacturer Part Number: NAND04G-B2D
• Description: 4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories
• Manufacturer: NUMONYX [Numonyx B.V]

NAND04G-B2D, NAND08G-BxC
Table 16.
1. For NAND08G-B4C devices, each 4 Gb die returns its own electronic signature.
Table 17.
NAND08GW3B4C
NAND08GR3B4C
NAND04GW3B2D
NAND04GW4B2D
NAND08GW3B2C
NAND08GW4B2C
Root part number
NAND04GR3B2D
NAND04GR4B2D
NAND08GR3B2C
NAND08GR4B2C
I/O1-I/O0
I/O3-I/O2
I/O5-I/O4
I/O6
I/O7
I/O
Electronic signature
Electronic signature byte 3
(1)
(1)
Number of simultaneously
between multiple devices
Interleaved programming
Byte 1
0020h
0020h
0020h
0020h
Internal chip number
programmed pages
20h
20h
20h
20h
Cache program
Definition
Cell type
Byte 2
ACh
DCh
BCh
CCh
D3h
C3h
A3h
B3h
(see
Byte 3
Table
Value
10h
10h
10h
10h
51h
51h
51h
51h
0 0
0 1
1 0
1 1
0 1
1 0
1 1
0 0
0 1
1 0
1 1
0 0
0
1
0
1
17)
(see
Byte 4
Table
D5h
D5h
15h
95h
55h
15h
95h
55h
18)
Not supported
Not supported
Description
Device operations
16-level cell
2-level cell
4-level cell
8-level cell
Supported
Supported
(see
1
2
4
8
1
2
4
8
Byte 5
Table
54h
54h
54h
54h
58h
58h
58h
58h
37/69
19)