NAND04G-B2D NUMONYX [Numonyx B.V], NAND04G-B2D Datasheet - Page 61

• Manufacturer Part Number: NAND04G-B2D
• Description: 4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories
• Manufacturer: NUMONYX [Numonyx B.V]

NAND04G-B2D, NAND08G-BxC
Figure 36. Block erase AC waveform
Figure 37. Reset AC waveform
RB
I/O
CL
W
AL
R
I/O
RB
R
CL
AL
W
E
Setup Command
Block Erase
60h
FFh
(Write Cycle time)
cycle 1
tWLWL
Add.
Block Address Input
cycle 2
Add.
cycle 3
Add.
tWHBL
(Reset Busy time)
tBLBH4
Confirm
Code
D0h
Block Erase
(Erase Busy time)
tBLBH3
70h
Read Status Register
tWHRL
DC and AC parameters
SR0
ai08038c
ai08043
61/69