NAND04G-B2D NUMONYX [Numonyx B.V], NAND04G-B2D Datasheet - Page 63

• Manufacturer Part Number: NAND04G-B2D
• Description: 4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories
• Manufacturer: NUMONYX [Numonyx B.V]

NAND04G-B2D, NAND08G-BxC
12.1
Ready/Busy signal electrical characteristics
Figure
signal. The value required for the resistor R
This is an example for 3 V devices:
where I
max is determined by the maximum value of t
Figure 41. Ready/Busy AC waveform
Figure 42. Ready/Busy load circuit
42,
L
is the sum of the input currents of all the devices tied to the Ready/Busy signal. R
Figure 41
and
ready V DD
Figure 43
DEVICE
V SS
V DD
R P min
t f
R P min
show the electrical characteristics for the Ready/Busy
=
V OL
-------------------------------------------------------------
V DDmax V OLmax
=
P
-------------------------- -
8mA
busy
I OL
can be calculated using the following equation:
R P
r
3,2V
.
Open Drain Output
RB
–
+
+
I L
I L
t r
ibusy
V OH
AI07564B
AI07563B
DC and AC parameters
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P