NAND04G-B2D NUMONYX [Numonyx B.V], NAND04G-B2D Datasheet - Page 47

• Manufacturer Part Number: NAND04G-B2D
• Description: 4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories
• Manufacturer: NUMONYX [Numonyx B.V]

NAND04G-B2D, NAND08G-BxC
9.5
Error correction code
An ECC can be implemented in the NAND Flash memories to identify and correct errors in
the data. For every 2048 bits in the device, the implementation of 22 bits of ECC (16 bits for
line parity plus 6 bits for column parity) is recommended.
Figure 23. Error detection
New ECC generated
XOR previous ECC
22 bit data = 0
with new ECC
during read
YES
All results
No Error
= zero?
NO
11 bit data = 1
Correctable
YES
= zero?
>1 bit
Error
NO
1 bit data = 1
ECC Error
ai08332
Software algorithms
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