NAND04G-B2D NUMONYX [Numonyx B.V], NAND04G-B2D Datasheet - Page 51

• Manufacturer Part Number: NAND04G-B2D
• Description: 4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories
• Manufacturer: NUMONYX [Numonyx B.V]

NAND04G-B2D, NAND08G-BxC
Figure 24. Equivalent testing circuit for AC characteristics measurement
Table 28.
1. Leakage current and standby current double in stacked devices.
I
Symbol
OL
V
I
I
I
I
V
V
V
DD1
DD2
DD3
DD5
I
V
I
LKO
LO
OH
LI
OL
(RB)
IH
IL
DC characteristics (1.8 V devices)
V
Standby current (CMOS
DD
Output leakage current
Operating
Output high voltage level
Output low voltage level
Output low current (RB)
Input leakage current
current
supply voltage (erase and
Input high voltage
Input low voltage
program lockout)
Parameter
Sequential
Program
Erase
read
NAND Flash
(1)
(1)
(1)
)
V
E=V
C L
V
OUT
Test conditions
t
IN
I
RLRL
I
OH
E=V
= 0 to V
OL
V
WP=0/V
IL,
= 0 to V
GND
OL
= -100 µA
I
= 100 µA
OUT
minimum
DD
= 0.1 V
-
-
-
-
-
-0.2,
DD
= 0 mA
DD
DD
max
max
V DD
GND
0.8 * V
V
DD
2R ref
2R ref
Min
-0.3
3
-
-
-
-
-
-
-
-
- 0.1
DD
Ai11085
DC and AC parameters
Typ
10
10
10
10
-
-
-
-
-
-
-
-
V
0.2 * V
DD
Max
±10
±10
0.1
1.2
20
20
20
50
4
-
+ 0.3
DD
Unit
51/69
mA
mA
mA
mA
µA
µA
µA
V
V
V
V
V