MC908JL16CFAE FREESCALE [Freescale Semiconductor, Inc], MC908JL16CFAE Datasheet - Page 36

• Manufacturer Part Number: MC908JL16CFAE
• Description: Microcontrollers
• Manufacturer: FREESCALE [Freescale Semiconductor, Inc]

Memory
2.5.5 FLASH Program Operation
Programming of the FLASH memory is done on a row basis. A row consists of 32 consecutive bytes
starting from addresses $XX00, $XX20, $XX40, $XX60, $XX80, $XXA0, $XXC0 or $XXE0. Use this
step-by-step procedure to program a row of FLASH memory:
Figure 2-4
This program sequence is repeated throughout the memory until all data is programmed.
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10. Clear the PGM bit.
11. Wait for time, t
12. Clear the HVEN bit.
13. After time, t
1. Set the PGM bit. This configures the memory for program operation and enables the latching of
2. Read the FLASH block protect register.
3. Write any data to any FLASH location within the address range of the row to be programmed.
4. Wait for a time, t
5. Set the HVEN bit.
6. Wait for a time, t
7. Write data to the FLASH address to be programmed.
8. Wait for time, t
9. Repeat steps 7 and 8 until all bytes within the row are programmed.
address and data for programming.
shows a flowchart of the programming algorithm.
The time between each FLASH address change (step 7 to step 7), or the
time between the last FLASH addressed programmed to clearing the PGM
bit (step 7 to step 10), must not exceed the maximum programming time,
t
Programming and erasing of FLASH locations cannot be performed by
code being executed from the FLASH memory. While these operations
must be performed in the order shown, other unrelated operations may
occur between the steps.
PROG
RCV
PROG
NVH
max.
(1 µs), the memory can be accessed in read mode again.
NVS
PGS
(5 µs).
(30 µs).
(10 µs).
(5 µs).
MC68HC908JL16 Data Sheet, Rev. 1.1
NOTE
Freescale Semiconductor