M52S64322A-10BG ESMT [Elite Semiconductor Memory Technology Inc.], M52S64322A-10BG Datasheet - Page 21

• Manufacturer Part Number: M52S64322A-10BG
• Description: 512K x 32 Bit x 4 Banks Mobile Synchronous DRAM
• Manufacturer: ESMT [Elite Semiconductor Memory Technology Inc.]

ESMT
*Note: 1. To prevent bus contention, there should be at least one gap between data in and data out.
5. Write Interrupted by Precharge & DQM
*Note:
Elite Semiconductor Memory Technology Inc.
1. To prevent bus contention, DQM should be issued which makes at least one gap between data in and data out.
2. To inhibit invalid write, DQM should be issued.
3. This precharge command and burst write command should be of the same bank, otherwise it is not precharge
interrupt but only another bank precharge of four banks operation.
( b ) C L = 3 , B L = 4
i i i ) C M D
i v ) C M D
i i ) C M D
v ) C M D
i ) C M D
C M D
C L K
D Q M
D Q
D Q M
D Q M
D Q M
C L K
D Q M
D Q M
D Q
D Q
D Q
D Q
D Q
W R
D 0
D 1
R D
R D
R D
R D
R D
D 2
W R
D 0
D 3
M a s k e d b y D Q M
* N o t e 2
* N o t e 3
W R
D 0
D 1
H i - Z
W R
Q0
D 2
D 1
D 0
* N o t e 1
H i - Z
W R
D 3
D 2
D 0
D 1
W R
D 0
D 3
D 2
D 1
D 1
D 3
D 2
D 3
D 2
D 3
Publication Date: Aug. 2009
Revision: 1.3
M52S64322A
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