M52S64322A-10BG ESMT [Elite Semiconductor Memory Technology Inc.], M52S64322A-10BG Datasheet - Page 34
M52S64322A-10BG
Manufacturer Part Number
M52S64322A-10BG
Description
512K x 32 Bit x 4 Banks Mobile Synchronous DRAM
Manufacturer
ESMT [Elite Semiconductor Memory Technology Inc.]
Datasheet
1.M52S64322A-10BG.pdf
(47 pages)
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ESMT
M52S64322A
Page Read Cycle at Different Bank @ Burst Length = 4
Note: 1. CS can be don’t cared when RAS , CAS and WE are high at the clock high going edge.
2. To interrupt a burst read by row precharge, both the read and the precharge banks must be the same.
Publication Date: Aug. 2009
Elite Semiconductor Memory Technology Inc.
Revision: 1.3
34/47
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