M52S64322A-10BG ESMT [Elite Semiconductor Memory Technology Inc.], M52S64322A-10BG Datasheet - Page 33

• Manufacturer Part Number: M52S64322A-10BG
• Description: 512K x 32 Bit x 4 Banks Mobile Synchronous DRAM
• Manufacturer: ESMT [Elite Semiconductor Memory Technology Inc.]

ESMT
Page Read & Write Cycle at Same Bank @ Burst Length = 4
Note: 1. To Write data before burst read ends. DQM should be asserted three cycle prior to write command to avoid
Elite Semiconductor Memory Technology Inc.
2. Row precharge will interrupt writing. Last data input, t
3. DQM should mask invalid input data on precharge command cycle when asserting precharge before
bus contention.
end of burst. Input data after Row precharge cycle will be masked internally.
RDL
before row precharge, will be written.
Publication Date: Aug. 2009
Revision: 1.3
M52S64322A
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