GS8662S08E GSI [GSI Technology], GS8662S08E Datasheet - Page 18

• Manufacturer Part Number: GS8662S08E
• Description: 72Mb Burst of 2 DDR SigmaSIO-II SRAM
• Manufacturer: GSI [GSI Technology]

Capacitance
(T
AC Test Conditions
Input and Output Leakage Characteristics
Rev: 1.01 9/2005
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Note: This parameter is sample tested.
Note:
Test conditions as specified with output loading as shown unless otherwise noted.
A
= 25
Output Leakage Current
o
Input Leakage Current
C, f = 1 MH
(except mode pins)
Output Capacitance
Input Capacitance
Parameter
Parameter
Doff
DQ
Z
, V
Output reference level
DD
Input reference level
Max. input slew rate
Input high level
Input low level
= 3.3 V)
Parameter
Symbol
I
INDOFF
I
I
OL
IL
Symbol
VT = V
C
C
OUT
IN
AC Test Load Diagram
DDQ
18/37
/2
50Ω
Test Conditions
V
V
0 V ≤ V
Output Disable,
OUT
V
DD
IN
≥ V
= 0 to V
= 0 to V
Test conditions
IN
IN
≤ V
≥ V
V
GS8662S08/09/18/36E-333/300/250/200/167
V
DD
OUT
DDQ
IN
IL
IL
= 0 V
RQ = 250 Ω (HSTL I/O)
V
= 0 V
REF
= 0.75 V
–100 uA
–2 uA
–2 uA
–2 uA
Min.
Conditions
Typ.
V
V
2 V/ns
V
4
6
DDQ
DDQ
0 V
DDQ
/2
/2
© 2005, GSI Technology
Max
Max.
2 uA
2 uA
2 uA
2 uA
5
7
Preliminary
Notes
Unit
pF
pF