GS8662S08E GSI [GSI Technology], GS8662S08E Datasheet - Page 19

• Manufacturer Part Number: GS8662S08E
• Description: 72Mb Burst of 2 DDR SigmaSIO-II SRAM
• Manufacturer: GSI [GSI Technology]

Programmable Impedance HSTL Output Driver DC Electrical Characteristics
Rev: 1.01 9/2005
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Output High Voltage
Output Low Voltage
Output High Voltage
Output Low Voltage
Notes:
1.
2.
3.
4.
5.
6.
Parameter tested with RQ = 250Ω and V
Minimum Impedance mode, ZQ = V
I
I
I
I
OH
OL
OH
OL
= 1.0 mA
= –1.0 mA
= (V
= (V
DDQ
DDQ
/2) / (RQ/5) +/– 15% @ V
/2) / (RQ/5) +/– 15% @ V
Parameter
SS
OL
OH
= V
DDQ
= V
DDQ
DDQ
= 1.5 V or 1.8 V
/2 (for: 175Ω ≤ RQ ≤ 350Ω).
/2 (for: 175Ω ≤ RQ ≤ 350Ω).
19/37
Symbol
V
V
V
V
OH1
OH2
OL1
OL2
GS8662S08/09/18/36E-333/300/250/200/167
V
V
DDQ
DDQ
V
DDQ
Min.
Vss
/2 – 0.12
/2 – 0.12
– 0.2
V
V
DDQ
DDQ
Max.
V
/2 + 0.12
/2 + 0.12
0.2
DDQ
© 2005, GSI Technology
Units
Preliminary
V
V
V
V
Notes
1, 3
2, 3
4, 5
4, 6