GS8662S08E GSI [GSI Technology], GS8662S08E Datasheet - Page 22

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GS8662S08E

Manufacturer Part Number
GS8662S08E
Description
72Mb Burst of 2 DDR SigmaSIO-II SRAM
Manufacturer
GSI [GSI Technology]
Datasheet
AC Electrical Characteristics (Continued)
Rev: 1.01 9/2005
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Hold Times
Address Input Hold Time
Control Input Hold Time
Data Input Hold Time
Notes:
1.
2.
3.
4.
5.
6.
7.
All Address inputs must meet the specified setup and hold times for all latching clock edges.
Control singles are R, W, BW0, BW1, and (NW0, NW1 for x8) and (BW2, BW3 for x36).
If C, C are tied high, K, K become the references for C, C timing parameters
To avoid bus contention, at a given voltage and temperature tCHQX1 is bigger than tCHQZ. The specs as shown do not imply bus conten-
tion because tCHQX1 is a MIN parameter that is worst case at totally different test conditions (0°C, 1.9 V) than tCHQZ, which is a MAX
parameter (worst case at 70°C, 1.7 V). It is not possible for two SRAMs on the same board to be at such different voltages and tempera-
tures.
Clock phase jitter is the variance from clock rising edge to the next expected clock rising edge.
V
Echo clock is very tightly controlled to data valid/data hold. By design, there is a ±0.1 ns variation from echo clock to data. The datasheet
parameters reflect tester guard bands and test setup variations.
DD
slew rate must be less than 0.1 V DC per 50 ns for DLL lock retention. DLL lock time begins once V
Parameter
Symbol
t
t
t
KHAX
KHDX
KHIX
Min
0.28
0.4
0.4
-333
Max
22/37
Min
0.4
0.4
0.3
-300
Max
GS8662S08/09/18/36E-333/300/250/200/167
Min
0.35
0.5
0.5
-250
Max
Min
0.6
0.6
0.4
-200
DD
Max
and input clock are stable.
Min
0.7
0.7
0.5
© 2005, GSI Technology
-167
Preliminary
Max
Units
ns
ns
ns

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