K9F4G08U0M SAMSUNG [Samsung semiconductor], K9F4G08U0M Datasheet - Page 11

• Manufacturer Part Number: K9F4G08U0M
• Description: 512M x 8 Bits / 1G x 8 Bits NAND Flash Memory
• Manufacturer: SAMSUNG [Samsung semiconductor]

K9K8G08U1M
K9F4G08U0M
AC Timing Characteristics for Command / Address / Data Input
NOTES : 1. The transition of the corresponding control pins must occur only once while WE is held low
Program / Erase Characteristics
NOTE : 1. Typical value is measured at Vcc=3.3V, T
within.
CLE Setup Time
CLE Hold Time
CE Setup Time
CE Hold Time
WE Pulse Width
ALE Setup Time
ALE Hold Time
Data Setup Time
Data Hold Time
Write Cycle Time
WE High Hold Time
ALE to Data Loading Time
Program Time
Dummy Busy Time for Two-Plane Page Program
Number of Partial Program Cycles
in the Same Page
Block Erase Time
2. Typical program time is defined as the time that more than 50% of the whole pages are programmed at Vcc of 3.3V and temperature of 25°C
2. tADL is the time from the WE rising edge of final address cycle to the WE rising edge of first data cycle
Parameter
Parameter
Spare Array
Main Array
A
=25°C. Not 100% tested.
Symbol
t
t
t
t
t
CLS
ALS
ADL
t
t
CS
t
DS
t
t
t
t
CLH
ALH
WC
WH
CH
WP
DH
(1)
(1)
(1)
(1)
(2)
Symbol
t
PROG
t
t
Nop
DBSY
BERS
11
(2)
Min
12
20
12
12
12
25
10
70
Min
5
5
5
5
-
-
-
-
-
Typ
200
0.5
1.5
-
-
FLASH MEMORY
Max
-
-
-
-
-
-
-
-
-
-
-
-
Max
700
1
4
4
2
Advance
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
cycles
cycles
Unit
ms
µs
µs