K9F4G08U0M SAMSUNG [Samsung semiconductor], K9F4G08U0M Datasheet - Page 2

• Manufacturer Part Number: K9F4G08U0M
• Description: 512M x 8 Bits / 1G x 8 Bits NAND Flash Memory
• Manufacturer: SAMSUNG [Samsung semiconductor]

K9K8G08U1M
K9F4G08U0M
GENERAL DESCRIPTION
PRODUCT LIST
• Voltage Supply
• Organization
• Automatic Program and Erase
• Page Read Operation
Offered in 512Mx8bit, the K9F4G08U0M is a 4G-bit NAND Flash Memory with spare 128M-bit. Its NAND cell provides the most cost-
effective solution for the solid state application market. A program operation can be performed in typical 200µs on the (2K+64)Byte
page and an erase operation can be performed in typical 1.5ms on a (128K+4K)Byte block. Data in the data page can be read out at
25ns cycle time per Byte. The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip
write controller automates all program and erase functions including pulse repetition, where required, and internal verification and
margining of data. Even the write-intensive systems can take advantage of the K9F4G08U0M′s extended reliability of 100K program/
erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9F4G08U0M is an optimum solu-
tion for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility.
512M x 8 Bit / 1G x 8 Bits NAND Flash Memory
FEATURES
- 2.70V ~ 3.60V
- Memory Cell Array : (512M + 16,384K)bit x 8bit
- Data Register : (2K + 64)bit x 8bit
- Page Program : (2K + 64)Byte
- Block Erase : (128K + 4K)Byte
- Page Size : (2K + 64)Byte
- Random Read : 20µs(Max.)
- Serial Access : 25ns(Min.)
K9F4G08U0M-Y,P
K9F4G08U0M-I
K9K8G08U1M-I
Part Number
2.70 ~ 3.60V
Vcc Range
2
• Fast Write Cycle Time
• Command/Address/Data Multiplexed I/O Port
• Hardware Data Protection
• Reliable CMOS Floating-Gate Technology
• Command Driven Operation
• Intelligent Copy-Back with internal 1bit/528Byte EDC
• Unique ID for Copyright Protection
• Package :
- K9K8G08U1M-ICB0/IIB0
- Page Program time : 200µs(Typ.)
- Block Erase Time : 1.5ms(Typ.)
- Program/Erase Lockout During Power Transitions
- Endurance : 100K Program/Erase Cycles
- Data Retention : 10 Years
- K9F4G08U0M-YCB0/YIB0
- K9F4G08U0M-PCB0/PIB0 : Pb-FREE PACKAGE
- K9F4G08U0M-ICB0/IIB0
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
52 - Pin ULGA (12 x 17 / 1.00 mm pitch)
52 - Pin ULGA (12 x 17 / 1.00 mm pitch)
Organization
X8
FLASH MEMORY
PKG Type
52ULGA
TSOP1
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