K9F4G08U0M SAMSUNG [Samsung semiconductor], K9F4G08U0M Datasheet - Page 30

• Manufacturer Part Number: K9F4G08U0M
• Description: 512M x 8 Bits / 1G x 8 Bits NAND Flash Memory
• Manufacturer: SAMSUNG [Samsung semiconductor]

K9K8G08U1M
K9F4G08U0M
4th ID Data
90 ID : Access command = 90H
3rd ID Data
ID Definition Table
1
2
3
4
Organization
Serial AccessMinimum
Interleave Program
Between multiple chips
Page Size
(w/o redundant area )
Block Size
(w/o redundant area )
Redundant Area Size
( byte/512byte)
Internal Chip Number
Cell Type
Number of
Simultaneously
Programmed Pages
Cache Program
st
nd
rd
th
Byte
Byte
Byte
Byte
Description
Maker Code
Device Code
Internal Chip Number, Cell Type, Number of Simultaneously Programed Pages, Etc
Page Size, Block Size,Redundant Area Size, Organization, Serial Access Minimum
128KB
256KB
Reserved
50ns
25ns
Reserved
Reserved
1KB
2KB
Reserved
Reserved
64KB
8
16
x8
x16
1
2
4
8
16 Level Cell
1
2
4
8
Not Support
Support
Not Support
Support
2 Level Cell
4 Level Cell
8 Level Cell
Description
Description
30
I/O7
0
1
I/O7
0
1
0
1
I/O6
0
1
I/O6
0
1
I/O5 I/O4
0
0
1
1
I/O5 I/O4
0
0
1
1
0
1
0
1
0
1
0
1
FLASH MEMORY
I/O3 I/O2
I/O3
0
0
1
1
0
0
1
1
0
1
0
1
I/O2
0
1
Advance
I/O1 I/O0
0
0
1
1
I/O1 I/O0
0
0
1
1
0
1
0
1
0
1
0
1