K9F4G08U0M SAMSUNG [Samsung semiconductor], K9F4G08U0M Datasheet - Page 12

• Manufacturer Part Number: K9F4G08U0M
• Description: 512M x 8 Bits / 1G x 8 Bits NAND Flash Memory
• Manufacturer: SAMSUNG [Samsung semiconductor]

K9K8G08U1M
K9F4G08U0M
AC Characteristics for Operation
NOTE: 1. If reset command(FFh) is written at Ready state, the device goes into Busy for maximum 5us.
Data Transfer from Cell to Register
ALE to RE Delay
CLE to RE Delay
Ready to RE Low
WE High to Busy
Read Cycle Time
RE Access Time
CE Access Time
RE High to Output Hi-Z
CE High to Output Hi-Z
RE High to Output Hold
RE Low to Output Hold
CE High to Output Hold
RE High Hold Time
Output Hi-Z to RE Low
RE High to WE Low
WE High to RE Low
Device Resetting Time(Read/Program/Copy-Back Program/Erase)
RE Pulse Width
Parameter
12
Symbol
t
t
t
t
RHOH
t
t
t
t
t
t
t
RLOH
t
t
RHW
WHR
t
t
t
t
REA
CEA
RHZ
CHZ
COH
REH
CLR
RST
t
t
RR
WB
RC
AR
RP
IR
R
Min
100
10
10
20
12
25
15
15
10
60
5
0
-
-
-
-
-
-
-
FLASH MEMORY
5/10/40/500
Max
100
100
20
18
23
30
-
-
-
-
-
-
-
-
-
-
-
-
Advance
(1)
Unit
µs
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs