K9F4G08U0M SAMSUNG [Samsung semiconductor], K9F4G08U0M Datasheet - Page 26

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K9F4G08U0M

Manufacturer Part Number
K9F4G08U0M
Description
512M x 8 Bits / 1G x 8 Bits NAND Flash Memory
Manufacturer
SAMSUNG [Samsung semiconductor]
Datasheet

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K9K8G08U1M
K9F4G08U0M
BLOCK ERASE OPERATION
CLE
CE
WE
ALE
RE
R/B
I/Ox
Auto Block Erase
Setup Command
t
WC
60h
Row Add1
Row Address
Row Add2 Row Add3
Erase Command
D0h
t
WB
26
Busy
t
BERS
Read Status
Command
70h
FLASH MEMORY
I/O
I/O
0
0
=1 Error in Erase
=0 Successful Erase
I/O 0
Advance

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