K9F4G08U0M SAMSUNG [Samsung semiconductor], K9F4G08U0M Datasheet - Page 20

• Manufacturer Part Number: K9F4G08U0M
• Description: 512M x 8 Bits / 1G x 8 Bits NAND Flash Memory
• Manufacturer: SAMSUNG [Samsung semiconductor]

Status Read Cycle & EDC Status Read Cycle
K9K8G08U1M
K9F4G08U0M
I/Ox
Serial Access Cycle after Read
CE
RE
R/B
CLE
CE
WE
RE
I/Ox
t
RR
NOTES : Transition is measured ±200mV from steady state voltage with load.
t
RP
t
t
REA
CEA
t
RC
This parameter is sampled and not 100% tested.
tRLOH is valid when frequency is higher than 33MHz.
tRHOH starts to be valid when frequency is lower than 33MHz.
t
REH
(EDO Type, CLE=L, WE=H, ALE=L)
t
Dout
CLS
t
CS
70h or 7Bh
t
t
RLOH
WP
t
DS
t
REA
t
t
t
CH
DH
CLH
20
t
WHR
t
CLR
t
IR
t
CEA
t
REA
FLASH MEMORY
Status Output
t
RHOH
t
t
t
t
t
t
RHZ
CHZ
t
COH
RHOH
CHZ
RHZ
Dout
COH
Advance