K9F4G08U0M SAMSUNG [Samsung semiconductor], K9F4G08U0M Datasheet - Page 23
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K9F4G08U0M
Manufacturer Part Number
K9F4G08U0M
Description
512M x 8 Bits / 1G x 8 Bits NAND Flash Memory
Manufacturer
SAMSUNG [Samsung semiconductor]
Datasheet
1.K9F4G08U0M.pdf
(41 pages)
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Page Program Operation
K9K8G08U1M
K9F4G08U0M
CLE
CE
WE
ALE
RE
R/B
I/Ox
Input Command
SerialData
80h
t
WC
NOTES : tADL is the time from the WE rising edge of final address cycle to the WE rising edge of first data cycle.
Co.l Add1 Col. Add2
Column Address
Row Add1
t
WC
Row Address
Row Add2 Row Add3
t
ADL
23
1 up to m Byte
Din
N
Serial Input
t
WC
Din
M
Program
Command
10h
t
WB
t
FLASH MEMORY
PROG
Read Status
Command
I/O
I/O
Advance
0
0
=0 Successful Program
=1 Error in Program
70h
I/O
0