K9F5608Q0C-H SAMSUNG [Samsung semiconductor], K9F5608Q0C-H Datasheet - Page 11

• Manufacturer Part Number: K9F5608Q0C-H
• Description: 32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
• Manufacturer: SAMSUNG [Samsung semiconductor]

ABSOLUTE MAXIMUM RATINGS
NOTE :
1. Minimum DC voltage is -0.6V on input/output pins. During transitions, this level may undershoot to -2.0V for periods <30ns.
2. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions
RECOMMENDED OPERATING CONDITIONS
(Voltage reference to GND, K9F56XXX0C-XCB0
Supply Voltage
Supply Voltage
Supply Voltage
K9F5608Q0C
K9F5608D0C
K9F5608U0C
Voltage on any pin relative to V
Temperature Under Bias
Storage Temperature
Short Circuit Current
as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Maximum DC voltage on input/output pins is V
Parameter
Parameter
Symbol
V
V
K9F5616Q0C
V
K9F5616D0C
K9F5616U0C
CCQ
CC
SS
K9F56XXX0C-XCB0
K9F56XXX0C-XCB0
K9F56XXX0C-XIB0
K9F56XXX0C-XIB0
SS
1.70
1.70
Min
K9F56XXQ0C(1.8V)
0
CC,
+0.3V which, during transitions, may overshoot to V
Typ.
1.8
1.8
0
:
T
A
=0 to 70 C, K9F56XXX0C-XIB0
Symbol
V
Max
1.95
1.95
V
T
T
IN/OUT
V
Ios
BIAS
CCQ
STG
0
CC
11
Min
2.4
2.4
K9F56XXD0C(2.65V)
0
1.8V DEVICE
-0.6 to + 2.45
-0.2 to + 2.45
-0.2 to + 2.45
Typ.
2.65
2.65
0
:
T
Max
2.9
2.9
A
0
-10 to +125
-40 to +125
-65 to +150
=-40 to 85 C)
Rating
CC
5
+2.0V for periods <20ns.
Min
2.7
2.7
3.3V/2.65V DEVICE
K9F56XXU0C(3.3V)
0
-0.6 to + 4.6
-0.6 to + 4.6
-0.6 to + 4.6
FLASH MEMORY
Typ.
3.3
3.3
0
Max
3.6
3.6
0
Unit
Unit
mA
V
V
V
V
C
C