K9F5608Q0C-H SAMSUNG [Samsung semiconductor], K9F5608Q0C-H Datasheet - Page 35

• Manufacturer Part Number: K9F5608Q0C-H
• Description: 32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
• Manufacturer: SAMSUNG [Samsung semiconductor]

> In high state of LOCKPRE pin, Block lock mode and Power on Auto read are enabled, otherwise it is
Block Lock Mode
Block Lock mode is enabled while LOCKPRE pin state is high, which is to offer protection features for NAND Flash data. The Block
Lock mode is divided into Unlock, Lock, Lock-tight operation. Consecutive blocks protects data by allowing those blocks to be locked
or lock-tighten with no latency. This block lock scheme offers two levels of protection. The first allows software control(command input
method) of block locking that is useful for frequently changed data blocks, while the second requires hardware control(WP low pulse
input method) before locking can be changed that is useful for protecting infrequently changed code blocks.
The followings summarized the locking functionality.
1. Block lock operation
1) Lock
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- Command Sequence: Lock block Command(2Ah)
- Partial block lock is not available; Lock block operation is based on all block unit
- All blocks default to locked by power-up and Hardware control(WP low pulse input)
- Unlocked blocks can be locked by using the Lock block command, and a lock block’ s status can be changed to unlock or lock-tight
WP
CLE
CE
WE
I/Ox
using the appropriate commands
regarded as NAND Flash without LOCKPRE pin.
- All blocks are in a locked state on power-up. Unlock sequence can unlock the locked blocks.
- The Lock-tight command locks blocks and prevents from being unlocked.
And Lock-tight state can be returned to lock state only by Hardware control(WP low pulse input).
Lock Command
2Ah
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FLASH MEMORY