K9F5608Q0C-H SAMSUNG [Samsung semiconductor], K9F5608Q0C-H Datasheet - Page 21

• Manufacturer Part Number: K9F5608Q0C-H
• Description: 32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
• Manufacturer: SAMSUNG [Samsung semiconductor]

System Interface Using CE don’ t-care.
For an easier system interface, CE may be inactive during the data-loading or sequential data-reading as shown below. The internal
528byte(x8 device), 264word(x16 device) page registers are utilized as seperate buffers for this operation and the system design gets
more flexible. In addition, for voice or audio applications which use slow cycle time on the order of u-seconds, de-activating CE during
the data-loading and reading would provide significant savings in power consumption.
Figure 6. Program Operation with CE don’ t-care.
Figure 7. Read Operation with CE don’ t-care.
K9F5608Q0C
K9F5608D0C
K9F5608U0C
CLE
CE
WE
ALE
CE
WE
I/Ox
R/B
WE
CLE
ALE
CE
RE
I/Ox
t
CS
00h
80h
K9F5616Q0C
K9F5616D0C
K9F5616U0C
Start Add.(3Cycle)
Start Add.(3Cycle)
t
WP
On K9F5608U0C_Y,P,V,F or K9F5608D0C_Y,P
CE must be held
low during tR
t
CH
t
R
Data Input
21
I/O
CE
RE
0
~
15
CE don’ t-care
CE don’ t-care
t
Data Output(sequential)
CEA
t
REA
FLASH MEMORY
Data Input
out
t
OH
10h