K9F5608Q0C-H SAMSUNG [Samsung semiconductor], K9F5608Q0C-H Datasheet - Page 37

• Manufacturer Part Number: K9F5608Q0C-H
• Description: 32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
• Manufacturer: SAMSUNG [Samsung semiconductor]

Program/Erase OPERATION(In Locked or Lock-tighten Block)
On the program or erase operation in Locked or Lock-tighten block, Busy state holds 1~10 s(
K9F5608Q0C
K9F5608D0C
K9F5608U0C
R/B
I/Ox
WPx = H &
Lock block command (2Ah)
WPx = H &
Lock-tight block command (2Ch)
60h(80h)
K9F5616Q0C
K9F5616D0C
K9F5616U0C
Address(&Data Input)
Unlock block Command (23h) + Start Block Address
Block Lock reset
WPx = L (>100ns)
Figure 15. State diagram of Block Lock
Locked or Lock-tighten Block address
Lock-tight
WPx = H &
unlock
Lock
Lock
Lock
+ Command (24h) + End Block Address
D0h(10h)
Unlock block Command (23h) + Start Block Address
Block Lock reset
WPx = L (>100ns)
WPx = H &
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+ Command (24h) + End Block Address
Power-up
t
LBSY
WPx = H &
Lock-tight block command (2Ch)
FLASH MEMORY
t
LBSY)
Lock-tight
Lock-tight
unlock
unlock
Lock
Lock