K9F5608Q0C-H SAMSUNG [Samsung semiconductor], K9F5608Q0C-H Datasheet - Page 36

• Manufacturer Part Number: K9F5608Q0C-H
• Description: 32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
• Manufacturer: SAMSUNG [Samsung semiconductor]

2) Unlock
3) Lock-tight
K9F5608Q0C
K9F5608D0C
K9F5608U0C
- Command Sequence: Unlock block Command(23h) + Start block address + Command(24h) + End block address
- Unlocked blocks can be programmed or erased.
- An unlocked block’ s status can be changed to the locked or lock-tighten state using the appropriate commands.
- Only one consecutive area can be released to unlock state from lock state; Unlocking multi area is not available.
- Start block address must be nearer to the logical LSB(Least Significant Bit) than End blcok address.
- One block is selected for unlocking block when Start block address is same as End block address.
WP
CLE
CE
WE
ALE
I/Ox
- Command Sequence: Lock-tight block Command(2Ch)
- Only locked blocks can be lock-tighten by lock-tight command.
WP
CLE
CE
WE
I/Ox
- Lock-tighten blocks offer the user an additional level of write protection beyond that of a regular lock block. A block that is lock-
tighten can’ t have it’ s state changed by software control, only by hardware control(WP low pulse input); Unlocking multi area is not
available
Unock Command
Lock-tight Command
2Ch
23h
K9F5616Q0C
K9F5616D0C
K9F5616U0C
Start Block Address 2cycles
Add.1
Add.2
36
Unlock Command
24h
End Block Address 2 cycles
FLASH MEMORY
Add.1
Add.2