K9F5608Q0C-H SAMSUNG [Samsung semiconductor], K9F5608Q0C-H Datasheet - Page 13

• Manufacturer Part Number: K9F5608Q0C-H
• Description: 32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
• Manufacturer: SAMSUNG [Samsung semiconductor]

VALID BLOCK
NOTE :
1. The
2. The 1st block, which is placed on 00h block address, is guaranteed to be a valid block, does not require Error Correction up to 1K Program/Erase
3.
AC TEST CONDITION
(K9F56XXX0C-XCB0 :TA=0 to 70 C, K9F56XXX0C-XIB0:TA=-40 to 85 C
CAPACITANCE
NOTE : Capacitance is periodically sampled and not 100% tested.
MODE SELECTION
NOTE : 1. X can be V
Input Pulse Levels
Input Rise and Fall Times
Input and Output Timing Levels
K9F56XXQ0C:Output Load (Vcc
K9F56XXD0C:Output Load (Vcc
K9F56XXU0C:Output Load (Vcc
K9F56XXU0C:Output Load (Vcc
K9F5608Q0C
K9F5608D0C
K9F5608U0C
K9F56XXQ0C : Vcc=1.70V~1.95V , K9F56XXD0C : Vcc=2.4V~2.9V , K9F56XXU0C : Vcc=2.7V~3.6V unless otherwise noted)
Valid Block Number
cycles.
Input/Output Capacitance
Input Capacitance
CLE
Minimum 1004 valid blocks are guaranteed for each contiguous 128Mb memory space.
sented with both cases of invalid blocks considered. Invalid blocks are defined as blocks that contain one or more bad bits
factory-marked bad blocks. Refer to the attached technical notes for a appropriate management of invalid blocks.
H
H
L
L
L
L
L
X
X
X
X
X
device
2. WP should be biased to CMOS high or CMOS low for standby.
ALE
X
H
H
X
X
X
X
L
L
L
L
L
Parameter
(1)
may include invalid blocks when first shipped. Additional invalid blocks may develop while being used. The number of valid blocks is pre-
Item
CE
IL
Parameter
X
X
X
X
H
L
L
L
L
L
L
L
or V
(
T
IH.
A
K9F5616Q0C
=25 C, V
K9F5616D0C
K9F5616U0C
WE
H
H
X
X
X
X
X
Q
Q
Q
Q
:2.65V +/-10%)
:3.0V +/-10%)
:3.3V +/-10%)
:1.8V +/-10%)
CC
RE
H
H
H
H
H
H
H
X
X
X
X
=1.8V/2.65V/3.3V, f=1.0MHz)
Symbol
Symbol
N
C
C
VB
I/O
IN
LOCKPRE
0V/V
1 TTL GATE and CL=30pF 1 TTL GATE and CL=30pF 1 TTL GATE and CL=50pF
X
X
X
X
X
X
X
X
X
X
X
CC
(2)
K9F56XXQ0C
Test Condition
0V to Vcc
0V/V
Vcc
V
V
5ns
2013
IN
Min
IL
WP
-
H
H
H
H
H
X
X
X
X
X
=0V
L
Q
=0V
CC
/2
13
(2)
Q
Data Input
Data Output
During Read(Busy)
During Read(Busy) on the devices except
K9F5608U0C_Y,P,V,F or K9F5608D0C_Y,P
During Program(Busy)
During Erase(Busy)
Write Protect
Stand-by
Read Mode
Write Mode
Typ.
Min
-
-
-
K9F56XXD0C
0V to Vcc
Vcc
Command Input
Address Input(3clock)
Command Input
Address Input(3clock)
5ns
On K9F5608U0C_Y,P,V,F or K9F5608D0C_Y,P
-
Q
/2
Q
Mode
FLASH MEMORY
2048
Max
Max
10
10
1 TTL GATE and CL=100pF
.
Do not erase or program
K9F56XXU0C
On
0.4V to 2.4V
1.5V
5ns
Blocks
Unit
Unit
pF
pF