K9F5608Q0C-H SAMSUNG [Samsung semiconductor], K9F5608Q0C-H Datasheet - Page 30

• Manufacturer Part Number: K9F5608Q0C-H
• Description: 32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
• Manufacturer: SAMSUNG [Samsung semiconductor]

Figure 9. Read2 Operation
Figure 8-1. Sequential Row Read1 Operation
R/B
I/Ox
K9F5608Q0C
K9F5608D0C
K9F5608U0C
RE
CLE
CE
WE
ALE
R/B
I/Ox
X16 device : A
X8 device : A
00h
01h
50h
3
4
~ A
~ A
Block
X16 device : A
7
X8 device : A
7
are "L"
Don’ t care
Start Add.(3Cycle)
A
K9F5616Q0C
K9F5616D0C
K9F5616U0C
Start Add.(3Cycle)
0
~ A
7
& A
1st half array
0
0
9
~ A
~ A
~ A
2
(00h Command)
3
24
Data Field
& A
& A
9
9
~ A
~ A
t
R
2nd half array
24
24
t
R
Spare Field
Data Field
Data Output
Main array
1st
On K9F5608U0C_Y,P,V,F or K9F5608D0C_Y,P
CE must be held
low during tR
1st
2nd
Nth
30
(only for
Spare Field
t
R
1st half array
K9F5608U0C_Y,P,V,F or K9F5608D0C_Y,P
(01h Command)
Data Field
Data Output
(528 Byte)
2nd half array
Data Output(Sequential)
2nd
Spare Field
Spare Field
FLASH MEMORY
t
R
1st
2nd
Nth
Data Output
)
(528 Byte)
Nth