K9F5608Q0C-H SAMSUNG [Samsung semiconductor], K9F5608Q0C-H Datasheet - Page 40

• Manufacturer Part Number: K9F5608Q0C-H
• Description: 32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
• Manufacturer: SAMSUNG [Samsung semiconductor]

READY/BUSY
The device has a R/B output that provides a hardware method of indicating the completion of a page program, erase and random
read completion. The R/B pin is normally high but transitions to low after program or erase command is written to the command reg-
ister or random read is started after address loading. It returns to high when the internal controller has finished the operation. The pin
is an open-drain driver thereby allowing two or more R/B outputs to be Or-tied. Because pull-up resistor value is related to tr(R/B)
and current drain during busy(ibusy) , an appropriate value can be obtained with the following reference chart(Fig 17). Its value can
be determined by the following guidance.
K9F5608Q0C
K9F5608D0C
K9F5608U0C
V
CC
GND
Device
open drain output
K9F5616Q0C
K9F5616D0C
K9F5616U0C
R/B
Rp
Figure 17. Rp vs tr ,tf & Rp vs ibusy
ibusy
C
L
Ready Vcc
40
tf
1.8V device - V
2.65V device - V
3.3V device - V
VOL
OL
OL
OL
Busy
: 0.1V, V
: 0.4V, V
: 0.4V, V
FLASH MEMORY
OH
OH
OH
: Vcc
: 2.4V
: Vcc
Q
-0.1V
Q
tr
-0.4V
VOH