MT48H32M32LFB5-6 IT:B Micron, MT48H32M32LFB5-6 IT:B Datasheet - Page 53
![no-image](/images/no-image-200.jpg)
MT48H32M32LFB5-6 IT:B
Manufacturer Part Number
MT48H32M32LFB5-6 IT:B
Description
Manufacturer
Micron
Datasheet
1.MT48H32M32LFB5-6_ITB.pdf
(81 pages)
- Current page: 53 of 81
- Download datasheet (3Mb)
Figure 25: WRITE-to-WRITE
PDF: 09005aef8404b23d
y68m_mobile_lpsdr.pdf – Rev. D 1/11 EN
Note:
Command
Data for any WRITE burst can be truncated with a subsequent READ command, and
data for a fixed-length WRITE burst can be followed immediately by a READ command.
After the READ command is registered, data input is ignored and WRITEs will not be
executed (see Figure 27 (page 54)). Data n + 1 is either the last of a burst of two or the
last desired data element of a longer burst.
Data for a fixed-length WRITE burst can be followed by or truncated with a PRE-
CHARGE command to the same bank, provided that auto precharge was not activated.
A continuous-page WRITE burst can be truncated with a PRECHARGE command to the
same bank. The PRECHARGE command should be issued
which the last desired input data element is registered. The auto precharge mode re-
quires a
In addition, when truncating a WRITE burst at high clock frequencies (
DQM signal must be used to mask input data for the clock edge prior to and the clock
edge coincident with the PRECHARGE command (see Figure 28 (page 55)). Data n + 1
is either the last of a burst of two or the last desired data element of a longer burst. Fol-
lowing the PRECHARGE command, a subsequent command to the same bank cannot
be issued until
In the case of a fixed-length burst being executed to completion, a PRECHARGE com-
mand issued at the optimum time (as described above) provides the same operation
that would result from the same fixed-length burst with auto precharge. The disadvant-
age of the PRECHARGE command is that it requires that the command and address
buses be available at the appropriate time to issue the command. The advantage of the
PRECHARGE command is that it can be used to truncate fixed-length bursts or continu-
ous page bursts.
Address
1. DQM is LOW. Each WRITE command may be issued to any bank.
CLK
DQ
t
WR of at least one clock with time to complete, regardless of frequency.
WRITE
Bank,
Col n
D
T0
n
IN
t
RP is met.
n + 1
NOP
D
T1
IN
53
Don’t Care
WRITE
Bank,
Col b
D
T2
b
IN
Micron Technology, Inc. reserves the right to change products or specifications without notice.
1Gb: x32 Mobile LPSDR SDRAM
t
WR after the clock edge at
© 2010 Micron Technology, Inc. All rights reserved.
WRITE Operation
t
CK < 15ns), the
Related parts for MT48H32M32LFB5-6 IT:B
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
![MT29F1G16ABBDAH4-IT:D](/images/no-image3.png)
Part Number:
Description:
VFBGA 63/I//MICRON NAND FLASH 1Gb Mass Storage
Manufacturer:
Micron Semiconductor Products
Datasheet:
![MT4264](/images/no-image3.png)
Part Number:
Description:
Manufacturer:
Micron Semiconductor Products
Datasheet:
![MT48LC4M32B2](/images/no-image3.png)
Part Number:
Description:
SYNCHRONOUS DRAM
Manufacturer:
Micron Semiconductor Products
Datasheet:
![MT28F640J3](/images/no-image3.png)
Part Number:
Description:
Q-FLASHTM MEMORY
Manufacturer:
Micron Semiconductor Products
Datasheet:
![MT4C4M4A1DJ-6](/images/no-image3.png)
Part Number:
Description:
Manufacturer:
Micron Semiconductor Products
Datasheet:
![MT4C4M4A1TG-6](/images/no-image3.png)
Part Number:
Description:
Manufacturer:
Micron Semiconductor Products
Datasheet:
![MT4C4M4B1DJ-5](/images/no-image3.png)
Part Number:
Description:
Manufacturer:
Micron Semiconductor Products
Datasheet:
![MT4C4M4B1DJ-6](/images/no-image3.png)
Part Number:
Description:
Manufacturer:
Micron Semiconductor Products
Datasheet:
![MT4LC4M4A1DJ-6](/images/no-image3.png)
Part Number:
Description:
4Meg x 4, 3,3V FPM DRAM
Manufacturer:
Micron Semiconductor Products
Datasheet:
![MT4LC4M4A1TG-6](/images/no-image3.png)
Part Number:
Description:
4Meg x 4, 3,3V FPM DRAM
Manufacturer:
Micron Semiconductor Products
Datasheet:
![MT4LC4M4B1DJ-5](/images/no-image3.png)
Part Number:
Description:
Manufacturer:
Micron Semiconductor Products
Datasheet:
![MT4LC4M4B1TG-5](/images/no-image3.png)
Part Number:
Description:
Manufacturer:
Micron Semiconductor Products
Datasheet:
![MT4LC4M4E8DJ-5](/images/no-image3.png)
Part Number:
Description:
4Meg x 4 banks, EDO DRAM, 3.3V, standard refresh, 50ns
Manufacturer:
Micron Semiconductor Products
Datasheet:
![MT4LC4M4E8TG-5](/images/no-image3.png)
Part Number:
Description:
4Meg x 4 banks, EDO DRAM, 3.3V, standard refresh, 50ns
Manufacturer:
Micron Semiconductor Products
Datasheet:
![MT4LC4M4E8TG-6](/images/no-image3.png)
Part Number:
Description:
4Meg x 4 banks, EDO DRAM, 3.3V, standard refresh, 60ns
Manufacturer:
Micron Semiconductor Products
Datasheet: