MCIMX255AJM4AR2 Freescale Semiconductor, MCIMX255AJM4AR2 Datasheet - Page 32

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MCIMX255AJM4AR2

Manufacturer Part Number
MCIMX255AJM4AR2
Description
Processors - Application Specialized IMX25 1.2 AUTO
Manufacturer
Freescale Semiconductor
Datasheet

Specifications of MCIMX255AJM4AR2

Core
ARM926EJ-S
Processor Series
MCIMX25
Maximum Clock Frequency
400 MHz
Instruction / Data Cache Memory
16 KB
Data Ram Size
128 KB
Operating Supply Voltage
1.15 V to 1.52 V
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
Package / Case
MAPBGA-400
Interface Type
USB
Memory Type
DDR2
Minimum Operating Temperature
- 40 C
1
2
3
4
5
3.6.3
The DDR pad type is configured by the IOMUXC_SW_PAD_CTL_GRP_DDRTYPE register (see
Chapter 4, “External Signals and Pin Multiplexing,” in the i.MX25 Multimedia Applications Processor
Reference Manual).
3.6.3.1
Table 24
1.8V ( 5%) applications.
32
Input Pad Propagation Delay with Hysteresis,
40%–60%
Input Pad Transition Times without Hysteresis
Input Pad Transition Times with Hysteresis
Maximum Input Transition Times
Duty cycle
Clock frequency
Output pad transition times
Output pad transition times
Output pad transition times
Output pad propagation delay
50%–50%
Output pad propagation delay
50%–50%
Output pad propagation delay
50%–50%
Output pad propagation delay
40%–60%
Maximum condition for tpr, tpo, and tpv: wcs model, 1.1 V, IO 3.0 V and 105 °C. Minimum condition for tpr, tpo, and tpv: bcs
model, 1.3 V, IO 3.6 V and –40 °C. Input transition time from core is 1ns (20%–80%).
Minimum condition for tps: wcs model, 1.1 V, IO 3.0 V and 105 °C. tps is measured between VIL to VIH for rising edge and
between VIH to VIL for falling edge.
Maximum condition for tdit: bcs model, 1.3 V, IO 3.6 V and –40 °C.
Maximum condition for tpi and trfi: wcs model, 1.1 V, IO 3.0 V and 105 °C. Minimum condition for tpi and trfi: bcs model, 1.3 V,
IO 3.6 V and –40 °C. Input transition time from pad is 5 ns (20%–80%).
Hysteresis mode is recommended for input with transition time greater than 25 ns.
4
shows AC parameters for mobile DDR I/O. These settings are suitable for mDDR and DDR2
DDR I/O AC Parameters
DDR_TYPE = 00 Standard Setting I/O AC Parameters and Requirements
1
Parameter
Table 23. Fast I/O AC Parameters for OVDD = 3.0
1
1
1
(max. drive)
(high drive)
(standard drive)
i.MX25 Applications Processor for Automotive Products, Rev. 9
1
1
1
1
(max. drive),
(high drive),
(standard drive),
(max. drive),
5
Table 24. AC Parameters for Mobile DDR I/O
4
4
Symbol
Fduty
tpo
tpo
tpo
tpo
tpr
tpr
tpr
trm
tpi
trfi
trfi
f
Condition
1.6pF
1.6pF
1.6pF
25 pF
50 pF
25 pF
50 pF
25 pF
50 pF
15 pF
35 pF
15 pF
35 pF
15 pF
35 pF
15 pF
35 pF
Load
1.353/1.457 1.637/1.659 2.163/1.991
0.16/0.12
0.16/0.13
Rise/Fall
0.52/0.51
0.98/0.96
1.13/1.10
2.15/2.10
2.26/2.19
4.30/4.18
0.80/1.03
1.06/1.32
1.04/1.27
1.63/1.90
1.55/1.80
2.72/3.06
0.80/0.91
1.06/1.12
3.6 V (continued)
Min.
40
0.23/0.18
0.22/0.18
0.79/0.72
1.49/1.34
1.74/1.55
3.28/2.92
3.46/3.07
6.59/5.79
1.36/1.50
1.76/1.90
1.74/1.83
2.63/2.69
2.53/2.57
4.31/4.29
1.44/1.59
1.76/1.91
Typ.
50
Freescale Semiconductor
10.13/8.55
1.25/1.09
2.31/1.98
2.71/2.30
5.11/4.31
5.39/4.56
2.21/2.40
2.83/2.82
2.79/2.70
4.18/3.86
4.03/3.76
6.80/6.19
2.24/2.29
2.74/2.75
Rise/Fall
0.33/0.29
0.33/0.29
Max.
133
60
Units
MHz
ns
ns
ns
ns
ns
ns
ns
%
ns
ns
ns
ns

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