STD9NM40N STMicroelectronics, STD9NM40N Datasheet - Page 13

• Manufacturer Part Number: STD9NM40N
• Description: MOSFET N-Ch 400V 0.73Ohm 5.6A pwr Mdmesh II
• Manufacturer: STMicroelectronics

Specifications of STD9NM40N

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 400 V
• Gate-source Breakdown Voltage: 25 V
• Continuous Drain Current: 5.6 A
• Resistance Drain-source Rds (on): 0.79 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: D2PAK
• Fall Time: 8.8 ns
• Gate Charge Qg: 14 nC
• Power Dissipation: 60 W
• Rise Time: 4.4 ns
• Typical Turn-off Delay Time: 25 ns

STD9NM40N, STP9NM40N
Table 10.
Dim.
L20
L30
∅
D1
H1
b1
e1
J1
L1
D
Q
A
E
F
b
c
e
L
P
TO-220 type A mechanical data
15.25
Min.
4.40
0.61
1.14
0.48
2.40
4.95
1.23
6.20
2.40
3.50
3.75
2.65
10
13
Doc ID 023762 Rev 2
16.40
28.90
Typ.
1.27
mm
Package mechanical data
15.75
10.40
Max.
4.60
0.88
1.70
0.70
2.70
5.15
1.32
6.60
2.72
3.93
3.85
2.95
14
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