STD9NM40N STMicroelectronics, STD9NM40N Datasheet - Page 7

• Manufacturer Part Number: STD9NM40N
• Description: MOSFET N-Ch 400V 0.73Ohm 5.6A pwr Mdmesh II
• Manufacturer: STMicroelectronics

Specifications of STD9NM40N

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 400 V
• Gate-source Breakdown Voltage: 25 V
• Continuous Drain Current: 5.6 A
• Resistance Drain-source Rds (on): 0.79 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: D2PAK
• Fall Time: 8.8 ns
• Gate Charge Qg: 14 nC
• Power Dissipation: 60 W
• Rise Time: 4.4 ns
• Typical Turn-off Delay Time: 25 ns

STD9NM40N, STP9NM40N
Figure 8.
Figure 10. Capacitance variations
Figure 12. Normalized gate threshold voltage
R
0.075
0.077
0.076
0.071
0.070
1000
0.074
0.073
0.072
DS(on)
100
(norm)
(pF)
V
(Ω)
10
GS(th)
C
1.00
0.80
0.70
0.90
1
0.1
0
-50
vs temperature
Static drain-source on-resistance
-25
1
V
1
0
GS
=10V
2
25
50
10
3
I
D
= 250 µA
75
4
100
100
T
5
J
(°C)
V
Doc ID 023762 Rev 2
AM07923v1
DS
AM16308v1
AM00891v1
I
(V)
D
Ciss
Crss
(A)
Coss
Figure 9.
Figure 11. Output capacitance stored energy
Figure 13. Normalized on resistance vs
V
E
(V)
(µJ)
(norm)
R
12
10
GS
oss
1.6
1.2
1.0
1.4
0.6
0.4
0.2
0.8
DS(on)
2
8
6
4
0
0
0.9
0.5
1.3
2.1
1.7
0
0
V
-50
DS
temperature
Gate charge vs gate-source voltage
2
50
-25
4
100
0
I
6
150
D
25
= 2.5 A
V
Electrical characteristics
I
DD
D
8
200
=5.6A
50
=320V
10
250
75
100
12
300
14
T
350
J
(°C)
AM07924v1
Q
AM16309v1
AM16306v1
V
g
V
150
100
300
200
250
50
0
DS
(nC)
DS
(V)
7/18
(V)