STD9NM40N STMicroelectronics, STD9NM40N Datasheet - Page 9

• Manufacturer Part Number: STD9NM40N
• Description: MOSFET N-Ch 400V 0.73Ohm 5.6A pwr Mdmesh II
• Manufacturer: STMicroelectronics

Specifications of STD9NM40N

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 400 V
• Gate-source Breakdown Voltage: 25 V
• Continuous Drain Current: 5.6 A
• Resistance Drain-source Rds (on): 0.79 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: D2PAK
• Fall Time: 8.8 ns
• Gate Charge Qg: 14 nC
• Power Dissipation: 60 W
• Rise Time: 4.4 ns
• Typical Turn-off Delay Time: 25 ns

STD9NM40N, STP9NM40N
3
Figure 16. Switching times test circuit for
Figure 18. Test circuit for inductive load
Figure 20. Unclamped inductive waveform
25 Ω
P
V
W
DD
G
V
D
S
GS
D.U.T.
A
B
Test circuits
resistive load
switching and diode recovery times
I
D
V
R
D
G
R
G
FAST
DIODE
B
A
I
DM
V
G
A
B
D
R
D.U.T.
L
S
D
L=100μH
V
2200
μF
(BR)DSS
3.3
μF
3.3
μF
Doc ID 023762 Rev 2
1000
μF
AM01468v1
AM01472v1
AM01470v1
V
DD
V
DD
V
DD
Figure 17. Gate charge test circuit
Figure 19. Unclamped inductive load test
Figure 21. Switching time waveform
V
P
i
V
W
0
0
i
=20V=V
P
w
10%
2200
μF
1kΩ
GMAX
td
circuit
on
I
90%
V
t
D
on
D
I
G
2.7kΩ
12V
t
=CONST
r
47kΩ
10%
V
GS
L
D.U.T.
V
47kΩ
100Ω
DS
2200
μF
100nF
90%
td
off
t
off
Test circuits
3.3
μF
D.U.T.
t
f
10%
AM01473v1
AM01469v1
AM01471v1
1kΩ
90%
V
V
V
9/18
G
DD
DD