STD9NM40N STMicroelectronics, STD9NM40N Datasheet - Page 4

• Manufacturer Part Number: STD9NM40N
• Description: MOSFET N-Ch 400V 0.73Ohm 5.6A pwr Mdmesh II
• Manufacturer: STMicroelectronics

Specifications of STD9NM40N

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 400 V
• Gate-source Breakdown Voltage: 25 V
• Continuous Drain Current: 5.6 A
• Resistance Drain-source Rds (on): 0.79 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: D2PAK
• Fall Time: 8.8 ns
• Gate Charge Qg: 14 nC
• Power Dissipation: 60 W
• Rise Time: 4.4 ns
• Typical Turn-off Delay Time: 25 ns

Electrical characteristics
2
4/18
Electrical characteristics
(T
Table 5.
Table 6.
1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as C
C
V
Symbol
Symbol
C
R
V
oss(eq)
(BR)DSS
increases from 0 to 80% V
C
I
I
C
DS(on)
C
GS(th)
Q
Q
= 25 °C unless otherwise specified)
R
DSS
GSS
Q
oss
rss
iss
gs
gd
G
g
(1)
Input capacitance
Output capacitance
Reverse transfer
capacitance
Equivalent output
capacitance time
related
Intrinsic gate
resistance
Total gate charge
Gate-source charge
Gate-drain charge
Drain-source
breakdown voltage
(V
Zero gate voltage
drain current (V
Gate-body leakage
current (V
Gate threshold voltage V
Static drain-source on-
resistance
On /off states
Dynamic
GS
= 0)
Parameter
Parameter
DS
= 0)
DSS
GS
= 0)
Doc ID 023762 Rev 2
V
V
V
f = 1 MHz, I
V
V
(see
I
V
V
V
V
D
DS
GS
DS
DD
GS
GS
GS
DS
DS
DS
= 1 mA
= 400 V
= 400 V, T
= 50 V, f = 1 MHz,
= 0
= 0 to 50 V, V
= 10 V
= ± 25 V
= V
= 10 V, I
= 320 V, I
Figure
Test conditions
Test conditions
GS
, I
D
17)
D
=0
D
D
= 250 µA
C
= 2.5 A
= 5.6 A,
= 125 °C
GS
= 0
STD9NM40N, STP9NM40N
Min.
Min.
400
2
-
-
-
-
147.5
Typ.
Typ.
0.73
365
2.3
5.4
30
14
3
7
3
oss
± 100
Max.
Max.
when V
0.79
100
1
4
-
-
-
-
DS
Unit
Unit
µA
µA
nA
pF
pF
pF
pF
nC
nC
nC
V
V
Ω
Ω