STD9NM40N STMicroelectronics, STD9NM40N Datasheet - Page 8

• Manufacturer Part Number: STD9NM40N
• Description: MOSFET N-Ch 400V 0.73Ohm 5.6A pwr Mdmesh II
• Manufacturer: STMicroelectronics

Specifications of STD9NM40N

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 400 V
• Gate-source Breakdown Voltage: 25 V
• Continuous Drain Current: 5.6 A
• Resistance Drain-source Rds (on): 0.79 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: D2PAK
• Fall Time: 8.8 ns
• Gate Charge Qg: 14 nC
• Power Dissipation: 60 W
• Rise Time: 4.4 ns
• Typical Turn-off Delay Time: 25 ns

Electrical characteristics
8/18
Figure 14. Normalized V
(norm)
1.08
1.04
1.10
1.06
1.00
0.98
0.96
1.02
0.94
0.92
V
DS
-50
-25
0
25
I
D
=1mA
DS
50
vs temperature
75
100
T
J
Doc ID 023762 Rev 2
(°C)
AM09028v1
Figure 15. Source-drain diode forward
V
SD
0.6
1.0
0.9
0.8
0.7
0.5
1.3
1.2
1.1
(V)
0
characteristics
1
2
STD9NM40N, STP9NM40N
3
4
T
T
T
J
J
=25°C
J
=150°C
=-50°C
5
I
AM16310v1
SD
(A)