STD9NM40N STMicroelectronics, STD9NM40N Datasheet - Page 15

• Manufacturer Part Number: STD9NM40N
• Description: MOSFET N-Ch 400V 0.73Ohm 5.6A pwr Mdmesh II
• Manufacturer: STMicroelectronics

Specifications of STD9NM40N

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 400 V
• Gate-source Breakdown Voltage: 25 V
• Continuous Drain Current: 5.6 A
• Resistance Drain-source Rds (on): 0.79 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: D2PAK
• Fall Time: 8.8 ns
• Gate Charge Qg: 14 nC
• Power Dissipation: 60 W
• Rise Time: 4.4 ns
• Typical Turn-off Delay Time: 25 ns

STD9NM40N, STP9NM40N
5
Packaging mechanical data
Table 11.
Dim.
D1
A0
B0
B1
K0
P0
P1
P2
W
D
R
E
F
T
DPAK (TO-252) tape and reel mechanical data
Min.
10.4
1.65
2.55
0.25
15.7
6.8
1.5
1.5
7.4
3.9
7.9
1.9
40
Tape
mm
Doc ID 023762 Rev 2
Max.
10.6
12.1
1.85
2.75
0.35
16.3
1.6
7.6
4.1
8.1
2.1
7
Dim.
G
A
B
C
D
N
T
Base qty.
Bulk qty.
Min.
12.8
20.2
16.4
1.5
50
Packaging mechanical data
Reel
mm
Max.
2500
2500
13.2
18.4
22.4
330
15/18