STD9NM40N STMicroelectronics, STD9NM40N Datasheet - Page 3

• Manufacturer Part Number: STD9NM40N
• Description: MOSFET N-Ch 400V 0.73Ohm 5.6A pwr Mdmesh II
• Manufacturer: STMicroelectronics

Specifications of STD9NM40N

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 400 V
• Gate-source Breakdown Voltage: 25 V
• Continuous Drain Current: 5.6 A
• Resistance Drain-source Rds (on): 0.79 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: D2PAK
• Fall Time: 8.8 ns
• Gate Charge Qg: 14 nC
• Power Dissipation: 60 W
• Rise Time: 4.4 ns
• Typical Turn-off Delay Time: 25 ns

STD9NM40N, STP9NM40N
1
Electrical ratings
Table 2.
1. Pulse width limited by safe operating area.
2. I
Table 3.
Table 4.
Symbol
Symbol
Symbol
R
dv/dt
R
I
P
thj-case
DM
V
V
E
T
thj-pcb
I
SD
AR
I
I
TOT
T
DS
GS
stg
AS
D
D
j
(1)
(2)
≤ 5.6 A, di/dt ≤ 400 A/µs, V
Avalanche current, repetitive or not-repetitive
(pulse width limited by T
Single pulse avalanche energy
(starting T
Drain-source voltage
Gate-source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Peak diode recovery voltage slope
Storage temperature
Max. operating junction temperature
Thermal resistance junction-case max
Thermal resistance junction-pcb max
Absolute maximum ratings
Thermal data
Avalanche characteristics
j
= 25°C, I
Parameter
Parameter
Parameter
D
C
Doc ID 023762 Rev 2
Peak
= I
= 25 °C
j
AR
max)
< V
, V
(BR)DSS
DD
C
C
= 25 °C
= 100 °C
= 50 V)
, V
DS
= 80% V
(BR)DSS
DPAK
50
- 55 to 150
Value
Value
Value
± 25
22.4
2.08
140
400
150
5.6
4.3
60
40
2
TO-220
Electrical ratings
°C/W
°C/W
Unit
Unit
Unit
V/ns
mJ
°C
°C
W
A
V
V
A
A
3/18